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Molecular Beam Epitaxy Of Metamorphic InYGa1−YP Solar Cells On Mixed Anion GaasXP1−X/Gaas Graded Buffers, Stephanie Tomasulo, John Simon, Paul J. Simmonds, Jonathan Biagiotti, Minjoo L. Lee
Molecular Beam Epitaxy Of Metamorphic InYGa1−YP Solar Cells On Mixed Anion GaasXP1−X/Gaas Graded Buffers, Stephanie Tomasulo, John Simon, Paul J. Simmonds, Jonathan Biagiotti, Minjoo L. Lee
Paul J. Simmonds
The authors have grown metamorphic InyGa1−yP on optimized GaAsxP1−x/GaAs graded buffers via solid source molecular beam epitaxy(MBE) for multijunction solar cell applications. In this work, the authors show that a previously developed kinetic growth model can be used to predict the composition of mixed anion GaAsxP1−x alloys on GaAs as a function of substrate temperature and group-V flux. The advantages of using a high growth temperature of 700 °C are then described, including the minimized dependence of composition on small temperature variations, a linear dependence of film composition on …