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Tensile-Strained Growth On Low-Index Gaas, Paul J. Simmonds, Minjoo Larry Lee
Tensile-Strained Growth On Low-Index Gaas, Paul J. Simmonds, Minjoo Larry Lee
Paul J. Simmonds
We present a comparative study of the growth of tensile-strained GaP on the four low-index surfaces of GaAs: (001), (110), (111)A, and (111)B. For each surface orientation we outline the growth conditions required for smooth GaAshomoepitaxy. We are able to predict the resulting surface morphology when GaP is deposited onto these four GaAssurfaces by considering the influence of surface orientation on tensile strain relief. GaP deposited on GaAs(001) forms extremely smooth, planar layers. In contrast, the elastic relief of tensile strain on both GaAs(110) and GaAs(111)A leads to the three-dimensional self-assembly of GaP into dislocation-free nanostructures. Similarities between tensile and …
Structural And Optical Properties Of Inas/Alassb Quantum Dots With Gaas(Sb) Cladding Layers, Paul J. Simmonds, Ramesh Babu Laghumavarapu, Meng Sun, Andrew Lin, Charles J. Reyner, Baolai Liang, Diana L. Huffaker
Structural And Optical Properties Of Inas/Alassb Quantum Dots With Gaas(Sb) Cladding Layers, Paul J. Simmonds, Ramesh Babu Laghumavarapu, Meng Sun, Andrew Lin, Charles J. Reyner, Baolai Liang, Diana L. Huffaker
Paul J. Simmonds
We investigate the effect of GaAs1−xSbxcladding layer composition on the growth and properties of InAsself-assembledquantum dots surrounded by AlAs0.56Sb0.44 barriers. Lowering Sb-content in the GaAs1−xSbx improves the morphology of the InAs quantum dots and reduces cladding layer alloy fluctuations. The result is a dramatic increase in photoluminescence intensity from the InAs quantum dots, with a peak at 0.87 eV. The emission energy exhibits a cube root dependence on excitation power, consistent with the type-II band alignment of the quantum dots. The characteristics of this quantum dot system show promise for …