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Electron Paramagnetic Resonance Study Of Neutral Mg Acceptors In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, Elizabeth M. Scherrer, K. T. Stevens, G. K. Foundos, K. B. Chang, Nancy C. Giles
Electron Paramagnetic Resonance Study Of Neutral Mg Acceptors In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, Elizabeth M. Scherrer, K. T. Stevens, G. K. Foundos, K. B. Chang, Nancy C. Giles
Faculty Publications
Electron paramagnetic resonance (EPR) is used to directly observe and characterize neutral Mg acceptors (Mg0Ga) in a β-Ga2O3 crystal. These acceptors, best considered as small polarons, are produced when the Mg-doped crystal is irradiated at or near 77 K with x rays. During the irradiation, neutral acceptors are formed when holes are trapped at singly ionized Mg acceptors (Mg−Ga). Unintentionally present Fe3+ (3d5) and Cr3+ (3d3) transition-metal ions serve as the corresponding electron traps. The hole is localized in a nonbonding p orbital on a threefold-coordinated oxygen ion …
Gallium Vacancies In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, K. T. Stevens, G. K. Foundos
Gallium Vacancies In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, K. T. Stevens, G. K. Foundos
Faculty Publications
The gallium vacancy, an intrinsic acceptor, is identified in β-Ga2O3 using electron paramagnetic resonance (EPR). Spectra from doubly ionized (V2−Ga) and singly ionized (V−Ga) gallium vacancies are observed at room temperature, without photoexcitation, after an irradiation with high-energy neutrons. The V2−Ga centers (with S = 1/2) have a slight angular variation due to a small anisotropy in the g matrix (principal values are 2.0034, 2.0097, and 2.0322). The V2−Ga centers also exhibit a resolved hyperfine structure due to equal and nearly isotropic interactions with the …