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- Nanostructured materials (7)
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- 3-Terminal MTJ (1)
- Acoustic phonon frequency (1)
- Agglomeration (1)
- Aluminum nitride (1)
- Annealing of crystals (1)
- Buried Multilayer Phase Defects (1)
- Capacitance-voltage (1)
- Chemical vapor deposition (1)
- Co doping and Hot temperature Implant (1)
- Computer systems (1)
- Copper-nickel alloys (1)
Articles 1 - 18 of 18
Full-Text Articles in Physics
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Legacy Theses & Dissertations (2009 - 2024)
The introduction of low dielectric constant materials within the integrated circuit (IC) chip technology industry was a concerted effort to decrease the resistance-capacitance (RC) time delay inherent within the dielectric materials used as insulators. This stems from a demand for greater device density per IC chip and decreased feature sizes but is fast becoming a reliability issue. Concomitant with the demand for decreased feature sizes, also in adherence with Moore’s Law (which states that the number of devices on a die doubles every two years), is a reduction in device speed and performance due to device intra-level interconnection signal delays. …
Investigation Of Optical Second Harmonic Generation From Si (100) With Process Tailored Surface & Embedded Ag Nanostructures For Advanced Si Nonlinear Nanophotonics, Gourav Bhowmik
Legacy Theses & Dissertations (2009 - 2024)
The challenge of current microelectronic architecture in transmission bandwidth and power consumption can be potentially solved by using silicon photonics technologies that are compatible with modern CMOS fabrication. One of the critical active photonic devices for Si photonics is a Si based optical modulator. Most of the reported silicon modulators rely on the free carrier plasma dispersion effect. In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer or a microring resonator to achieve intensity modulation, rendering them difficult for chip-level implementation due to a large footprint …
Materials For Giant Spin Hall Effect Devices, Avyaya Jayanthinarasimham
Materials For Giant Spin Hall Effect Devices, Avyaya Jayanthinarasimham
Legacy Theses & Dissertations (2009 - 2024)
Studies presented in this thesis are an effort to control the growth of β W and explore
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Legacy Theses & Dissertations (2009 - 2024)
Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. …
Development Of Iii-Sb Based Technologies For P-Channel Mosfet In Cmos Applications, Shailesh Kumar Madisetti
Development Of Iii-Sb Based Technologies For P-Channel Mosfet In Cmos Applications, Shailesh Kumar Madisetti
Legacy Theses & Dissertations (2009 - 2024)
The continuous scaling of silicon CMOS predicts the end of roadmap due to the difficulties such as that arise from electrostatic integrity, design complexities, and power dissipation. These fundamental and practical limitations bring the need for innovative design architectures or alternate materials with higher carrier transport than current Si based materials. New device designs such as multigate/gate-all-around architectures improve electrostatics while alternate materials like III-Vs such as III-As for electrons and III-Sbs for holes increase operational speed, lower power dissipation and thereby improve performance of the transistors due to their low effective mass and faster transport properties. Further, application of …
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Legacy Theses & Dissertations (2009 - 2024)
Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a …
Tailoring The Optical Properties Of Silicon With Ion Beam Created Nanostructures For Advanced Photonics Applications, Perveen Akhter
Tailoring The Optical Properties Of Silicon With Ion Beam Created Nanostructures For Advanced Photonics Applications, Perveen Akhter
Legacy Theses & Dissertations (2009 - 2024)
In today’s fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption …
Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit
Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to drive patterning solutions that enable devices with higher memory storage capacity, faster computing performance, lower cost per transistors, and higher transistor density. These developments in the field of semiconductor manufacturing along with the overall minimization of the size of transistors require cutting-edge metrology tools for characterization.
Ion Implantation In Zno : Defect Interaction And Impurity Diffusion, Faisal Yaqoob
Ion Implantation In Zno : Defect Interaction And Impurity Diffusion, Faisal Yaqoob
Legacy Theses & Dissertations (2009 - 2024)
In the first part of this research we studied the entropy changes in diffusion prefactor and its
Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha
Legacy Theses & Dissertations (2009 - 2024)
The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.
Growth And Characterization Of Graphene On Cuni Substrates, Parul Tyagi
Growth And Characterization Of Graphene On Cuni Substrates, Parul Tyagi
Legacy Theses & Dissertations (2009 - 2024)
Graphene is a single layer of sp2 bonded carbon atoms that crystallizes in the honeycomb structure. Because of its true two-dimensional structure, it has very unique electrical properties, including a very high carrier mobility that is symmetric for holes and electrons. To realize these unique properties, it is important to develop a method for growing graphene films with uniform thickness and low defect density. One of the most popular methods of growth is by chemical vapor deposition on Cu substrates, because it is self-limited. However many applications require the growth of graphene films that are more than one atomic layer …
Experimental And Simulation Studies Of Printability Of Buried Euv Mask Defects And Study Of Euv Reflectivity Loss Mechanisms Due To Standard Euv Mask Cleaning Processes, Mihirkant Upadhyaya
Experimental And Simulation Studies Of Printability Of Buried Euv Mask Defects And Study Of Euv Reflectivity Loss Mechanisms Due To Standard Euv Mask Cleaning Processes, Mihirkant Upadhyaya
Legacy Theses & Dissertations (2009 - 2024)
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography for high-volume semiconductor manufacturing of 14 nm half-pitch patterning and beyond. One of the primary concerns for making this a reality has been the ability to achieve defect-free masks. My study is focused on two aspects related to the performance degradation of the EUV masks namely EUV mask cleaning induced reflectivity loss mechanisms, and the buried multilayer phase defects in EUV masks.
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Legacy Theses & Dissertations (2009 - 2024)
The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …
Ruco To Extend The Scalability Of Ultra-Thin Direct Plate Liners, Daniel Verne Greenslit
Ruco To Extend The Scalability Of Ultra-Thin Direct Plate Liners, Daniel Verne Greenslit
Legacy Theses & Dissertations (2009 - 2024)
In traditional semiconductor technology a sputtered copper seed layer is used to improve the adhesion, microstucture, and electromigration characteristics of electrochemically deposited (ECD) copper. The seed layer is deposited on top of a Ta/TaN stack. The Ta layer acts as an adhesion and nucleation layer for the copper seed and the TaN serves as a diffusion barrier for the Cu. As the line widths continue to shrink, scaling each of these layers becomes more difficult. It would be advantageous for the interconnect to be composed of as much copper as possible, transitioning from the traditional liner seed stack to a …
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Legacy Theses & Dissertations (2009 - 2024)
III-Nitrides on Si are of great technological importance due to the availability of large area, epi ready Si substrates and the ability to heterointegrate with mature silicon micro and nanoelectronics. The major roadblock with realizing this is the large difference in thermal expansion coefficients and lattice constants between the two material systems. A novel technique developed in our research lab shows the potential of simultaneous and substantial reduction in dislocation and crack density in GaN on Si (111). Research undertaken in the current doctoral dissertation, validates the superior GaN quality on Si obtained using our technique and determines the factors …
Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni
Electron-Phonon Interactions And Quantum Confinement Effects On Optical Transitions In Nanoscale Silicon Films, Vimal Kumar Kamineni
Legacy Theses & Dissertations (2009 - 2024)
Theoretical studies have attributed the temperature dependence of the linear optical response (dielectric function) of bulk semiconductors to electron-phonon interactions and thermal expansion of the lattice. However, the role of phonons in the optical properties of nanoscale structures is often overlooked. This thesis systematically investigates the impact of both carrier confinement and electron-phonon interactions using nanoscale films of silicon in crystalline silicon quantum wells (c-Si QW). Spectroscopic ellipsometry (SE) is a linear optical technique used to of extract the dielectric function and thickness of very thin films. X-ray reflectivity (XRR) was used as the complementary thickness metrology method. The dielectric …
Nucleation, Wetting And Agglomeration Of Copper And Copper-Alloy Thin Films On Metal Liner Surfaces, Stephanie Florence Labarbera
Nucleation, Wetting And Agglomeration Of Copper And Copper-Alloy Thin Films On Metal Liner Surfaces, Stephanie Florence Labarbera
Legacy Theses & Dissertations (2009 - 2024)
One of the key challenges in fabricating narrower and higher aspect ratio interconnects using damascene technology has been achieving an ultra-thin (~2 nm) and continuous Cu seed coverage on trench sidewalls. The thin seed is prone to agglomeration because of poor Cu wetting on the Ta liner. Using in-situ conductance measurements, the effect of lowering the substrate temperature during Cu seed deposition has been studied on tantalum (Ta) and ruthenium (Ru) liner surfaces. On a Ta surface, it was found that lowering the deposition temperature to -65°C increases the nucleation rate of the Cu thin film, and reduces the minimum …
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …