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Full-Text Articles in Physics
Infrared Dielectric Functions And Brillouin Zone Center Phonons Of Α-Ga2O3 Compared To Α-Al2O3, Megan Stokey, Rafal Korlacki, Matthew J. Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert
Infrared Dielectric Functions And Brillouin Zone Center Phonons Of Α-Ga2O3 Compared To Α-Al2O3, Megan Stokey, Rafal Korlacki, Matthew J. Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the anisotropic dielectric functions of rhombohedral α-Ga2O3 by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high-frequency and static dielectric constants. We perform density functional theory computations and determine the phonon dispersion for all branches in the Brillouin zone, and we derive all phonon mode parameters at the Brillouin zone center including Raman-active, infrared-active, and silent modes. Excellent agreement is obtained between our experimental and computation results as well as among all previously reported partial information from experiment …
High-Frequency And Below Bandgap Anisotropic Dielectric Constants In Α-(AlXGa1-X)2O3 (0≤X≤1), Matthew Hilfiker, Ufuk Kilic, Megan Stokey, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Rafal Korlacki, Mathias Schubert
High-Frequency And Below Bandgap Anisotropic Dielectric Constants In Α-(AlXGa1-X)2O3 (0≤X≤1), Matthew Hilfiker, Ufuk Kilic, Megan Stokey, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Rafal Korlacki, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum α-(AlxGa1-x)2O3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam epitaxy on m-plane sapphire. The spectroscopic ellipsometry measurements were performed at multiple azimuthal angles to resolve the uniaxial dielectric properties. A Cauchy dispersion model was applied, and high-frequency dielectric constants are determined for polarization perpendicular (ε∞,⟂) and parallel (ε∞,∥) to the thin film c-axis. The optical birefringence is negative throughout the …
Anisotropic Dielectric Functions, Band-To-Band Transitions, And Critical Points In Α-Ga2O3, Matthew J. Hilfiker, Rafal Korlacki, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Ufuk Kilic, Megan Stokey, Mathias Schubert
Anisotropic Dielectric Functions, Band-To-Band Transitions, And Critical Points In Α-Ga2O3, Matthew J. Hilfiker, Rafal Korlacki, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Ufuk Kilic, Megan Stokey, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an α-Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to 8.75 eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M0-type van Hove singularities for polarization perpendicular to the c axis, …
Strain And Stress Relationships For Optical Phonon Modes In Monoclinic Crystals With Β-Ga2O3 As An Example, Rafal Korlacki, Megan Stokey, Alyssa Lynn Mock, Sean Knight, Alexis Papamichail, Vanya Darakchieva, Mathias Schubert
Strain And Stress Relationships For Optical Phonon Modes In Monoclinic Crystals With Β-Ga2O3 As An Example, Rafal Korlacki, Megan Stokey, Alyssa Lynn Mock, Sean Knight, Alexis Papamichail, Vanya Darakchieva, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
Strain-stress relationships for physical properties are of interest for heteroepitaxial material systems, where strain and stress are inherent due to thermal expansion and lattice mismatch. We report linear perturbation theory strain and stress relationships for optical phonon modes in monoclinic crystals for strain and stress situations which maintain the monoclinic symmetry of the crystal. By using symmetry group analysis and phonon frequencies obtained under various deformation scenarios from density-functional perturbation theory calculations on β-Ga2O3, we obtain four strain and four stress potential parameters for each phonon mode. We demonstrate that these parameters are sufficient to …
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
In this dissertation, optical Hall effect (OHE) measurements are used to determine the free charge carrier properties of important two-dimensional materials and monoclinic oxides. Two-dimensional material systems have proven useful in high-frequency electronic devices due to their unique properties, such as high mobility, which arise from their two-dimensional nature. Monoclinic oxides exhibit many desirable characteristics, for example low-crystal symmetry which could lead to anisotropic carrier properties. Here, single-crystal monoclinic gallium oxide, an AlInN/GaN-based high-electron-mobility transistor (HEMT) structure, and epitaxial graphene are studied as examples. To characterize these material systems, the OHE measurement technique is employed. The OHE is a physical …
Dielectric Function Tensor (1.5 Ev To 9.0 Ev), Anisotropy, And Band To Band Transitions Of Monoclinic Β-(AlXGa1–X)2O3 (X ≤ 0.21) Films, Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafal Korlacki, Akhil Mauze, Yuewei Zhang, James Speck, Mathias Schubert
Dielectric Function Tensor (1.5 Ev To 9.0 Ev), Anisotropy, And Band To Band Transitions Of Monoclinic Β-(AlXGa1–X)2O3 (X ≤ 0.21) Films, Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafal Korlacki, Akhil Mauze, Yuewei Zhang, James Speck, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A set of monoclinic β-(AlxGa1–x)2O3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented β-Ga2O3 substrates for compositions x ≤ 0.21 is investigated by generalized spectroscopic ellipsometry at room temperature in the spectral range of 1.5 eV–9.0 eV. We present the composition dependence of the excitonic and band to band transition energy parameters using a previously described eigendielectric summation approach for β-Ga2O3 from the study by Mock et al. All energies shift to a shorter wavelength with the increasing Al content in …
Phonon Order And Reststrahlen Bands Of Polar Vibrations In Crystals With Monoclinic Symmetry, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Vanya Darakchieva
Phonon Order And Reststrahlen Bands Of Polar Vibrations In Crystals With Monoclinic Symmetry, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Vanya Darakchieva
Department of Electrical and Computer Engineering: Faculty Publications
In this Rapid Communication, we present the order of the phonon modes and the appearance of the reststrahlen bands for monoclinic symmetry materials with polar lattice vibrations. Phonon modes occur in associated pairs of transverse and longitudinal optical modes, and pairs either belong to inner or outer phonon modes. Inner modes are nested within outer modes. Outer modes cause polarization-dependent reststrahlen bands. Inner modes cause polarization-independent reststrahlen bands. The directional limiting frequencies within the Born-Huang approach are bound to within outer mode frequency regions not occupied by inner mode pairs. Hence, an unusual phonon mode order can occur where both …
Longitudinal Phonon Plasmon Mode Coupling In Β-Ga2O3, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva
Longitudinal Phonon Plasmon Mode Coupling In Β-Ga2O3, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva
Department of Electrical and Computer Engineering: Faculty Publications
In this letter, we investigate a set of n-type single crystals of monoclinic symmetry β-Ga2O3 with different free electron concentration values by generalized far infrared and infrared spectroscopic ellipsometry. In excellent agreement with our previous model prediction, we find here by experiment that longitudinal-phonon-plasmon coupled modes are polarized either within the monoclinic plane or perpendicular to the monoclinic plane. As predicted, all modes change the amplitude and frequency with the free electron concentration. The most important observation is that all longitudinal-phonon-plasmon coupled modes polarized within the monoclinic plane continuously change their direction as a function of …
Elevated Temperature Dependence Of The Anisotropic Visible-To-Ultraviolet Dielectric Function Of Monoclinic Β-Ga2o3, Alyssa Mock, Jeremy Vanderslice, Rafal Korlacki, John A. Woollam, Mathias Schubert
Elevated Temperature Dependence Of The Anisotropic Visible-To-Ultraviolet Dielectric Function Of Monoclinic Β-Ga2o3, Alyssa Mock, Jeremy Vanderslice, Rafal Korlacki, John A. Woollam, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We report on the temperature dependence of the dielectric tensor elements of n-type conductive β-Ga2O3 from 22 °C to 550 °C in the spectral range of 1.5 eV–6.4 eV. We present the temperature dependence of the excitonic and band-to-band transition energy parameters using a previously described eigendielectric summation approach [A. Mock et al., Phys. Rev. B 96, 245205 (2017)]. We utilize a Bose-Einstein analysis of the temperature dependence of the observed transition energies and reveal electron coupling with average phonon temperature in excellent agreement with the average over all longitudinal phonon plasmon coupled modes reported previously [M. …
Band-To-Band Transitions, Selection Rules, Effective Mass, And Excitonic Contributions In Monoclinic Β-Ga2o3, Alyssa Mock, Rafal Korlacki, Chad Briley, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, Mathias Schubert
Band-To-Band Transitions, Selection Rules, Effective Mass, And Excitonic Contributions In Monoclinic Β-Ga2o3, Alyssa Mock, Rafal Korlacki, Chad Briley, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β-Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75–9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the …
Anisotropy, Phonon Modes, And Free Charge Carrier Parameters In Monoclinic Β-Gallium Oxide Single Crystals, Mathias Schubert, Rafal Korlacki, Sean Knight, Tino Hofmann, Stefan Schöche, Vanya Darakchieva, Erik Janzén, Bo Monemar, Daniela Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Yoshinao Kumagai, Ken Goto, Akito Kuramata, S. Yamakoshi, Masataka Higashiwaki
Anisotropy, Phonon Modes, And Free Charge Carrier Parameters In Monoclinic Β-Gallium Oxide Single Crystals, Mathias Schubert, Rafal Korlacki, Sean Knight, Tino Hofmann, Stefan Schöche, Vanya Darakchieva, Erik Janzén, Bo Monemar, Daniela Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Yoshinao Kumagai, Ken Goto, Akito Kuramata, S. Yamakoshi, Masataka Higashiwaki
Department of Electrical and Computer Engineering: Faculty Publications
We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β-Ga2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2̅01), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β-Ga2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic …