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- Phonon modes (12)
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- Department of Electrical and Computer Engineering: Faculty Publications (20)
- Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research (2)
- Alexei Gruverman Publications (1)
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Articles 1 - 27 of 27
Full-Text Articles in Physics
Asymmetric Control Of Light At The Nanoscale, Christos Argyropoulos
Asymmetric Control Of Light At The Nanoscale, Christos Argyropoulos
Department of Electrical and Computer Engineering: Faculty Publications
Breaking reciprocity at the nanoscale can produce directional formation of images due to the asymmetric nonlinear optical response of subwavelength anisotropic resonators. The self-induced passive non-reciprocity has advantages compared to magnet or time modulation approaches and may impact both classical and quantum photonics.
Infrared Dielectric Functions And Brillouin Zone Center Phonons Of Α-Ga2O3 Compared To Α-Al2O3, Megan Stokey, Rafal Korlacki, Matthew J. Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert
Infrared Dielectric Functions And Brillouin Zone Center Phonons Of Α-Ga2O3 Compared To Α-Al2O3, Megan Stokey, Rafal Korlacki, Matthew J. Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the anisotropic dielectric functions of rhombohedral α-Ga2O3 by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high-frequency and static dielectric constants. We perform density functional theory computations and determine the phonon dispersion for all branches in the Brillouin zone, and we derive all phonon mode parameters at the Brillouin zone center including Raman-active, infrared-active, and silent modes. Excellent agreement is obtained between our experimental and computation results as well as among all previously reported partial information from experiment …
High-Frequency And Below Bandgap Anisotropic Dielectric Constants In Α-(AlXGa1-X)2O3 (0≤X≤1), Matthew Hilfiker, Ufuk Kilic, Megan Stokey, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Rafal Korlacki, Mathias Schubert
High-Frequency And Below Bandgap Anisotropic Dielectric Constants In Α-(AlXGa1-X)2O3 (0≤X≤1), Matthew Hilfiker, Ufuk Kilic, Megan Stokey, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Rafal Korlacki, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum α-(AlxGa1-x)2O3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam epitaxy on m-plane sapphire. The spectroscopic ellipsometry measurements were performed at multiple azimuthal angles to resolve the uniaxial dielectric properties. A Cauchy dispersion model was applied, and high-frequency dielectric constants are determined for polarization perpendicular (ε∞,⟂) and parallel (ε∞,∥) to the thin film c-axis. The optical birefringence is negative throughout the …
Optical Phonon Modes, Static And High-Frequency Dielectric Constants, And Effective Electron Mass Parameter In Cubic In2O3, Megan Stokey, Rafal Korlacki, Sean Knight, Alexander Ruder, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Yuxuan Zhang, Hongping Zhao, Vanya Darakchieva, Mathias Schubert
Optical Phonon Modes, Static And High-Frequency Dielectric Constants, And Effective Electron Mass Parameter In Cubic In2O3, Megan Stokey, Rafal Korlacki, Sean Knight, Alexander Ruder, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Yuxuan Zhang, Hongping Zhao, Vanya Darakchieva, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic ellipsometry, as well as first principles calculations. Dielectric function spectra measured on high quality, marginally electrically conductive melt grown single bulk crystals are obtained on a wavelength-by-wavelength (also known as point-by-point) basis and by numerical reduction of a subtle free charge carrier Drude model contribution. A four-parameter semi-quantum model is applied to determine all 16 pairs of infrared-active transverse and longitudinal optical phonon modes, including the high-frequency dielectric constant, ε∞=4.05±0.05. The …
Zinc Gallate Spinel Dielectric Function, Band-To-Band Transitions, And Γ-Point Effective Mass Parameters, Matthew J. Hilfiker, Megan Stokey, Rafal Korlacki, Ufuk Kilic, Zbigniew Galazka, Klaus Irmscher, Stefan Zollner, Mathias Schubert
Zinc Gallate Spinel Dielectric Function, Band-To-Band Transitions, And Γ-Point Effective Mass Parameters, Matthew J. Hilfiker, Megan Stokey, Rafal Korlacki, Ufuk Kilic, Zbigniew Galazka, Klaus Irmscher, Stefan Zollner, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the dielectric function of the emerging ultrawide bandgap semiconductor ZnGa2O4 from the near-infrared (0.75 eV) into the vacuum ultraviolet (8.5 eV) spectral regions using spectroscopic ellipsometry on high quality single crystal substrates. We perform density functional theory calculations and discuss the band structure and the Brillouin zone Γ-point band-to-band transition energies, their transition matrix elements, and effective band mass parameters. We find an isotropic effective mass parameter (0.24me) at the bottom of the Γ-point conduction band, which equals the lowest valence band effective mass parameter at the top of the highly anisotropic …
Plasmonic Waveguides To Enhance Quantum Electrodynamic Phenomena At The Nanoscale, Ying Li, Christos Argyropoulos
Plasmonic Waveguides To Enhance Quantum Electrodynamic Phenomena At The Nanoscale, Ying Li, Christos Argyropoulos
Department of Electrical and Computer Engineering: Faculty Publications
The emerging field of plasmonics can lead to enhanced light-matter interactions at extremely nanoscale regions. Plasmonic (metallic) devices promise to efficiently control both classical and quantum properties of light. Plasmonic waveguides are usually used to excite confined electromagnetic modes at the nanoscale that can strongly interact with matter. The analysis of these nanowaveguides exhibits similarities with their low frequency microwave counterparts. In this article, we review ways to study plasmonic nanostructures coupled to quantum optical emitters from a classical electromagnetic perspective. These quantum emitters are mainly used to generate single-photon quantum light that can be employed as a quantum bit …
Anisotropic Dielectric Functions, Band-To-Band Transitions, And Critical Points In Α-Ga2O3, Matthew J. Hilfiker, Rafal Korlacki, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Ufuk Kilic, Megan Stokey, Mathias Schubert
Anisotropic Dielectric Functions, Band-To-Band Transitions, And Critical Points In Α-Ga2O3, Matthew J. Hilfiker, Rafal Korlacki, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Ufuk Kilic, Megan Stokey, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an α-Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to 8.75 eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M0-type van Hove singularities for polarization perpendicular to the c axis, …
Strain And Stress Relationships For Optical Phonon Modes In Monoclinic Crystals With Β-Ga2O3 As An Example, Rafal Korlacki, Megan Stokey, Alyssa Lynn Mock, Sean Knight, Alexis Papamichail, Vanya Darakchieva, Mathias Schubert
Strain And Stress Relationships For Optical Phonon Modes In Monoclinic Crystals With Β-Ga2O3 As An Example, Rafal Korlacki, Megan Stokey, Alyssa Lynn Mock, Sean Knight, Alexis Papamichail, Vanya Darakchieva, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
Strain-stress relationships for physical properties are of interest for heteroepitaxial material systems, where strain and stress are inherent due to thermal expansion and lattice mismatch. We report linear perturbation theory strain and stress relationships for optical phonon modes in monoclinic crystals for strain and stress situations which maintain the monoclinic symmetry of the crystal. By using symmetry group analysis and phonon frequencies obtained under various deformation scenarios from density-functional perturbation theory calculations on β-Ga2O3, we obtain four strain and four stress potential parameters for each phonon mode. We demonstrate that these parameters are sufficient to …
Brillouin Zone Center Phonon Modes In Znga2O4, Megan Stokey, Rafal Korlacki, Sean Knight, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Vanya Darakchieva, Mathias Schubert
Brillouin Zone Center Phonon Modes In Znga2O4, Megan Stokey, Rafal Korlacki, Sean Knight, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Vanya Darakchieva, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
Infrared-active lattice mode properties of melt-grown high-quality single bulk crystals of ZnGa2O4 are investigated by combined spectroscopic ellipsometry and density functional theory computation analysis. The normal spinel structure crystals are measured by spectroscopic ellipsometry at room temperature in the range of 100 cm–1–1200 cm–1. The complex-valued dielectric function is determined from a wavenumber-by-wavenumber approach, which is then analyzed by the four-parameter semi-quantum model dielectric function approach augmented by impurity mode contributions. We determine four infrared-active transverse and longitudinal optical mode pairs, five localized impurity mode pairs, and the high frequency dielectric constant. All …
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
In this dissertation, optical Hall effect (OHE) measurements are used to determine the free charge carrier properties of important two-dimensional materials and monoclinic oxides. Two-dimensional material systems have proven useful in high-frequency electronic devices due to their unique properties, such as high mobility, which arise from their two-dimensional nature. Monoclinic oxides exhibit many desirable characteristics, for example low-crystal symmetry which could lead to anisotropic carrier properties. Here, single-crystal monoclinic gallium oxide, an AlInN/GaN-based high-electron-mobility transistor (HEMT) structure, and epitaxial graphene are studied as examples. To characterize these material systems, the OHE measurement technique is employed. The OHE is a physical …
Infrared-Active Phonon Modes In Single-Crystal Thorium Dioxide And Uranium Dioxide, Sean Knight, Rafal Korlacki, Christina Dugan, James C. Petrosky, Alyssa Lynn Mock, Peter A. Dowben, J. Matthew Mann, Martin M. Kimani, Mathias Schubert
Infrared-Active Phonon Modes In Single-Crystal Thorium Dioxide And Uranium Dioxide, Sean Knight, Rafal Korlacki, Christina Dugan, James C. Petrosky, Alyssa Lynn Mock, Peter A. Dowben, J. Matthew Mann, Martin M. Kimani, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
The infrared-active phonon modes, in single-crystal samples of thorium dioxide (ThO2) and uranium dioxide (UO2), were investigated using spectroscopic ellipsometry and compared with density functional theory. Both ThO2 and UO2 are found to have one infrared-active phonon mode pair [consisting of one transverse optic (TO) and one associated longitudinal optic (LO) mode], which is responsible for the dominant features in the ellipsometric data. At room temperature, our results for the mode pair’s resonant frequencies and broadening parameters are comparable with previous reflectance spectroscopy characterizations and density functional theory predictions. For ThO2, our …
Dielectric Function Tensor (1.5 Ev To 9.0 Ev), Anisotropy, And Band To Band Transitions Of Monoclinic Β-(AlXGa1–X)2O3 (X ≤ 0.21) Films, Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafal Korlacki, Akhil Mauze, Yuewei Zhang, James Speck, Mathias Schubert
Dielectric Function Tensor (1.5 Ev To 9.0 Ev), Anisotropy, And Band To Band Transitions Of Monoclinic Β-(AlXGa1–X)2O3 (X ≤ 0.21) Films, Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafal Korlacki, Akhil Mauze, Yuewei Zhang, James Speck, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A set of monoclinic β-(AlxGa1–x)2O3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented β-Ga2O3 substrates for compositions x ≤ 0.21 is investigated by generalized spectroscopic ellipsometry at room temperature in the spectral range of 1.5 eV–9.0 eV. We present the composition dependence of the excitonic and band to band transition energy parameters using a previously described eigendielectric summation approach for β-Ga2O3 from the study by Mock et al. All energies shift to a shorter wavelength with the increasing Al content in …
Electromagnon Excitation In Cupric Oxide Measured By Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry, Sean Knight, Dharmalingam Prabhakaran, Christian Binek, Mathias Schubert
Electromagnon Excitation In Cupric Oxide Measured By Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry, Sean Knight, Dharmalingam Prabhakaran, Christian Binek, Mathias Schubert
Christian Binek Publications
Here we present the use of Fabry-Pérot enhanced terahertz (THz) Mueller matrix ellipsometry to measure an electromagnon excitation in monoclinic cupric oxide (CuO). As a magnetically induced ferroelectric multiferroic, CuO exhibits coupling between electric and magnetic order. This gives rise to special quasiparticle excitations at THz frequencies called electromagnons. In order to measure the electromagnons in CuO, we exploit single-crystal CuO as a THz Fabry-Pérot cavity to resonantly enhance the excitation’s signature. This enhancement technique enables the complex index of refraction to be extracted. We observe a peak in the absorption coefficient near 0.705 THz and 215 K, which corresponds …
Phonon Order And Reststrahlen Bands Of Polar Vibrations In Crystals With Monoclinic Symmetry, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Vanya Darakchieva
Phonon Order And Reststrahlen Bands Of Polar Vibrations In Crystals With Monoclinic Symmetry, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Vanya Darakchieva
Department of Electrical and Computer Engineering: Faculty Publications
In this Rapid Communication, we present the order of the phonon modes and the appearance of the reststrahlen bands for monoclinic symmetry materials with polar lattice vibrations. Phonon modes occur in associated pairs of transverse and longitudinal optical modes, and pairs either belong to inner or outer phonon modes. Inner modes are nested within outer modes. Outer modes cause polarization-dependent reststrahlen bands. Inner modes cause polarization-independent reststrahlen bands. The directional limiting frequencies within the Born-Huang approach are bound to within outer mode frequency regions not occupied by inner mode pairs. Hence, an unusual phonon mode order can occur where both …
Longitudinal Phonon Plasmon Mode Coupling In Β-Ga2O3, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva
Longitudinal Phonon Plasmon Mode Coupling In Β-Ga2O3, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva
Department of Electrical and Computer Engineering: Faculty Publications
In this letter, we investigate a set of n-type single crystals of monoclinic symmetry β-Ga2O3 with different free electron concentration values by generalized far infrared and infrared spectroscopic ellipsometry. In excellent agreement with our previous model prediction, we find here by experiment that longitudinal-phonon-plasmon coupled modes are polarized either within the monoclinic plane or perpendicular to the monoclinic plane. As predicted, all modes change the amplitude and frequency with the free electron concentration. The most important observation is that all longitudinal-phonon-plasmon coupled modes polarized within the monoclinic plane continuously change their direction as a function of …
Lattice Dynamics Of Orthorhombic Ndgao3, Alyssa Mock, Rafal Korlacki, Sean Knight, Megan Stokey, Alex Fritz, Vanya Darakchieva, Mathias Schubert
Lattice Dynamics Of Orthorhombic Ndgao3, Alyssa Mock, Rafal Korlacki, Sean Knight, Megan Stokey, Alex Fritz, Vanya Darakchieva, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A complete set of infrared-active and Raman-active lattice modes is obtained from density functional theory calculations for single-crystalline centrosymmetric orthorhombic neodymium gallate. The results for infrared-active modes are compared with an analysis of the anisotropic long-wavelength properties using generalized spectroscopic ellipsometry. The frequency-dependent dielectric function tensor and dielectric loss function tensor of orthorhombic neodymium gallium oxide are reported in the spectral range of 80–1200 cm−1. A combined eigendielectric displacement vector summation and dielectric displacement loss vector summation approach augmented by considerations of lattice anharmonicity is utilized to describe the experimentally determined tensor elements. All infrared-active transverse and longitudinal …
Elevated Temperature Dependence Of The Anisotropic Visible-To-Ultraviolet Dielectric Function Of Monoclinic Β-Ga2o3, Alyssa Mock, Jeremy Vanderslice, Rafal Korlacki, John A. Woollam, Mathias Schubert
Elevated Temperature Dependence Of The Anisotropic Visible-To-Ultraviolet Dielectric Function Of Monoclinic Β-Ga2o3, Alyssa Mock, Jeremy Vanderslice, Rafal Korlacki, John A. Woollam, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We report on the temperature dependence of the dielectric tensor elements of n-type conductive β-Ga2O3 from 22 °C to 550 °C in the spectral range of 1.5 eV–6.4 eV. We present the temperature dependence of the excitonic and band-to-band transition energy parameters using a previously described eigendielectric summation approach [A. Mock et al., Phys. Rev. B 96, 245205 (2017)]. We utilize a Bose-Einstein analysis of the temperature dependence of the observed transition energies and reveal electron coupling with average phonon temperature in excellent agreement with the average over all longitudinal phonon plasmon coupled modes reported previously [M. …
Anisotropy And Phonon Modes From Analysis Of The Dielectric Function Tensor And The Inverse Dielectric Function Tensor Of Monoclinic Yttrium Orthosilicate, Alyssa Mock, Rafal Korlacki, Sean Knight, Mathias Schubert
Anisotropy And Phonon Modes From Analysis Of The Dielectric Function Tensor And The Inverse Dielectric Function Tensor Of Monoclinic Yttrium Orthosilicate, Alyssa Mock, Rafal Korlacki, Sean Knight, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the frequency dependence of the four independent Cartesian tensor elements of the dielectric function for monoclinic symmetry Y2SiO5 using generalized spectroscopic ellipsometry from 40–1200 cm−1. Three different crystal cuts, each perpendicular to a principle axis, are investigated. We apply our recently described augmentation of lattice anharmonicity onto the eigendielectric displacement vector summation approach [A.Mock et al., Phys. Rev. B 95, 165202 (2017)], and we present and demonstrate the application of an eigendielectric displacement loss vector summation approach with anharmonic broadening. We obtain an excellent match between all measured and model-calculated dielectric …
Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock
Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with …
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research
Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon …
Band-To-Band Transitions, Selection Rules, Effective Mass, And Excitonic Contributions In Monoclinic Β-Ga2o3, Alyssa Mock, Rafal Korlacki, Chad Briley, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, Mathias Schubert
Band-To-Band Transitions, Selection Rules, Effective Mass, And Excitonic Contributions In Monoclinic Β-Ga2o3, Alyssa Mock, Rafal Korlacki, Chad Briley, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β-Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75–9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the …
Anisotropy, Phonon Modes, And Lattice Anharmonicity From Dielectric Function Tensor Analysis Of Monoclinic Cadmium Tungstate, Alyssa Mock, Rafal Korlacki, Sean Knight, Mathias Schubert
Anisotropy, Phonon Modes, And Lattice Anharmonicity From Dielectric Function Tensor Analysis Of Monoclinic Cadmium Tungstate, Alyssa Mock, Rafal Korlacki, Sean Knight, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the frequency dependence of four independent Cartesian tensor elements of the dielectric function for CdWO4 using generalized spectroscopic ellipsometry within mid-infrared and far-infrared spectral regions. Different single crystal cuts, (010) and (001), are investigated. From the spectral dependencies of the dielectric function tensor and its inverse we determine all long-wavelength active transverse and longitudinal optic phonon modes with Au and Bu symmetry as well as their eigenvectors within the monoclinic lattice. We thereby demonstrate that such information can be obtained completely without physical model line-shape analysis in materials with monoclinic symmetry. We then augment the …
Anisotropy, Phonon Modes, And Free Charge Carrier Parameters In Monoclinic Β-Gallium Oxide Single Crystals, Mathias Schubert, Rafal Korlacki, Sean Knight, Tino Hofmann, Stefan Schöche, Vanya Darakchieva, Erik Janzén, Bo Monemar, Daniela Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Yoshinao Kumagai, Ken Goto, Akito Kuramata, S. Yamakoshi, Masataka Higashiwaki
Anisotropy, Phonon Modes, And Free Charge Carrier Parameters In Monoclinic Β-Gallium Oxide Single Crystals, Mathias Schubert, Rafal Korlacki, Sean Knight, Tino Hofmann, Stefan Schöche, Vanya Darakchieva, Erik Janzén, Bo Monemar, Daniela Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Yoshinao Kumagai, Ken Goto, Akito Kuramata, S. Yamakoshi, Masataka Higashiwaki
Department of Electrical and Computer Engineering: Faculty Publications
We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β-Ga2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2̅01), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β-Ga2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic …
Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li
Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li
Alexei Gruverman Publications
As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed …
Infrared Dielectric Anisotropy And Phonon Modes Of Rutile Tio2, Rafal Korlacki, Stefan Schöche, Tino Hofmann, Tom E. Tiwald, Mathias Schubert
Infrared Dielectric Anisotropy And Phonon Modes Of Rutile Tio2, Rafal Korlacki, Stefan Schöche, Tino Hofmann, Tom E. Tiwald, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
Spectroscopic ellipsometry in the mid-infrared and far-infrared spectral range and generalized ellipsometry in the mid-infrared spectral range are used to investigate the anisotropic dielectric response of rutile TiO2. The ordinary and extraordinary dielectric function tensor components and all infrared active phonon mode parameters of single crystalline rutile TiO2 are determined with high accuracy for wavelengths from 3 μm to 83 μm. The data were acquired from samples of (001), (100), and (111) surfaces cut from bulk single crystals. A factorized model dielectric function is employed in order to determine the frequencies and damping parameters of the transverse …
Feynman’S Relativistic Electrodynamics Paradox And The Aharonov-Bohm Effect, Adam Caprez, Herman Batelaan
Feynman’S Relativistic Electrodynamics Paradox And The Aharonov-Bohm Effect, Adam Caprez, Herman Batelaan
Department of Physics and Astronomy: Faculty Publications
An analysis is done of a relativistic paradox posed in the Feynman Lectures of Physics involving two interacting charges. The physical system presented is compared with similar systems that also lead to relativistic paradoxes. The momentum conservation problem for these systems is presented. The relation between the presented analysis and the ongoing debates on momentum conservation in the Aharonov-Bohm problem is discussed.
An Experimental Study Of The Cathode Fall In Helium And Argon With Wire Cathodes, L. G. Raub
An Experimental Study Of The Cathode Fall In Helium And Argon With Wire Cathodes, L. G. Raub
Papers from the University Studies series (University of Nebraska)
It was recognized rather early in the study of the phenomena of discharge of electricity through gases that the ordinary laws of conduction as found in solid and liquid conductors are not applicable to gases. It was shown by Zeleny and independently by Child that Ohm's law by no means represents the distribution of potential between electrodes in an ionized gas, but that the potential gradient is large in the vicinity of the electrodes, and not uniform throughout the space between them. When the pressure of the gas surrounding the electrodes is reduced to one or two millimeters and a …