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Full-Text Articles in Physics
Two-Magnon Excitations Observed By Neutron Scattering In The Two-Dimensional Spin-5/2 Heisenberg Antiferromagnet Rb2mnf4, T. Huberman, R. Coldea, R. A. Cowley, D. A. Tennant, R. L. Leheny, Rebecca Christianson, C. D. Frost
Two-Magnon Excitations Observed By Neutron Scattering In The Two-Dimensional Spin-5/2 Heisenberg Antiferromagnet Rb2mnf4, T. Huberman, R. Coldea, R. A. Cowley, D. A. Tennant, R. L. Leheny, Rebecca Christianson, C. D. Frost
Rebecca J. Christianson
The low-temperature magnetic excitations of the two-dimensional spin- 52 square-lattice Heisenberg antiferromagnetRb2MnF4 have been probed using pulsed inelastic neutron scattering. In addition to dominant sharppeaks identified with one-magnon excitations, a relatively weak continuum scattering is also observed at higherenergies. This is attributed to neutron scattering by pairs of magnons and the observed intensities are consistentwith predictions of spin wave theory.
Space Weather Community Operations Workshop: Planning For The Next Decade, J. Fulgham, Jennifer Meehan, W. Tobiska
Space Weather Community Operations Workshop: Planning For The Next Decade, J. Fulgham, Jennifer Meehan, W. Tobiska
Jennifer (Jinni) Meehan
No abstract provided.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
David V. Kerns
We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast …