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Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher
Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher
Nancy A. Burnham
The effects of electron beams on the analysis of CuInSe2surfaces are examined in this paper. Potential changes in the surface chemistry—including oxidation and desorption—under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam‐induced phenomena.