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Advanced Iii-V / Si Nano-Scale Transistors And Contacts: Modeling And Analysis, Seung Hyun Park
Advanced Iii-V / Si Nano-Scale Transistors And Contacts: Modeling And Analysis, Seung Hyun Park
Open Access Dissertations
The exponential miniaturization of Si CMOS technology has been a key to the electronics revolution. However, the continuous downscaling of the gate length becomes the biggest challenge to maintain higher speed, lower power, and better electrostatic integrity for each following generation. Hence, novel devices and better channel materials than Si are considered to improve the metal-oxide-semiconductor field-effect transistors (MOSFETs) device performance. III-V compound semiconductors and multi-gate structures are being considered as promising candidates in the next CMOS technology. III-V and Si nano-scale transistors in different architectures are investigated (1) to compare the performance between InGaAs of III-V compound semiconductors and …
Observation Of Upsilon Suppression, Search For Long-Lived Particles, And Observation Of B0s → Micro + Micro-- At The Lhc With The Cms Experiment, Zhen Hu
Open Access Dissertations
The LHC centre-of-mass energy allows abundant ϒ production in lead-lead (PbPb) collisions. A detailed measurement of the bottomonium production will help to characterize the dense matter produced in heavy-ion collisions. The full spectroscopy of quarkonium states has been proposed as a possible thermometer for the QGP. The measurement reported in Chapter 3 is performed with data recorded by CMS during the first PbPb run at 2010 and the proton-proton (pp) run at 2011, both at sqrt sNN = 2.76 TeV. The integrated luminosity corresponds to 7.28/µb for PbPb and 225/nb for ppcollisions. Using muons of transverse momentum ( …