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Iowa State University

Electromigration

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Behavior Of Grain Boundary Resistivity In Metals Predicted By A Two-Dimensional Model, Rand Dannenberg, Alexander H. King Jan 2000

Behavior Of Grain Boundary Resistivity In Metals Predicted By A Two-Dimensional Model, Rand Dannenberg, Alexander H. King

Alexander H. King

The behavior of a model for the specific grain boundary resistivity in metallic bamboo conductor lines is developed and compared to other theoretical treatments, and to experiment. The grain boundary is modeled as an array of scatterers on a plane. The scatterers are called “vacancy-ion” complexes, in which the vacancy represents the boundary free volume, and the ion is an atom adjacent to the vacancy. Three cases are investigated, that of noninterfering scatterers, a continuum of interfering scatterers, and discrete interfering scatterers. The approximations used lead to a specific grain boundary resistivity ∼10−16 Ω m2 for aluminum, in agreement with …