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Synthesis And Characterization Of Plasma Enhanced Chemically Vapor Deposited Tantalum Films, Weizhong Chen

Dissertations

A low temperature inorganic plasma-enhanced chemical vapor deposition (PECVD) process has been developed for the growth of Ta using tantalum pentachloride (TaC15) as the preferred precursor and hydrogen as the reactant gas. Ta coatings were deposited at substrate temperature of 370-400 °C, reactor working pressures of 0.7-2 Ton, hydrogen carrier flow rate of 10-20 sccm, hydrogen reactant flow rates of 500 sccm, and plasma power ranging from 60 to 100W. Ta coatings were characterized with respect to their chemical, structural, and morphological properties by Auger electron spectroscopy (AES), x-ray diffraction (XRD), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), scanning …