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Carbon Dioxide-Induced Corrosion Of Aisi 4140 Steel In Acidified Artificial Geothermal Brine, Anawati Anawati, Rayhan Izzat, Riene Kaelamanda Pragitta, Rafli Ihsan Hernandi
Carbon Dioxide-Induced Corrosion Of Aisi 4140 Steel In Acidified Artificial Geothermal Brine, Anawati Anawati, Rayhan Izzat, Riene Kaelamanda Pragitta, Rafli Ihsan Hernandi
Makara Journal of Science
Carbon dioxide (CO2)-induced corrosion often occurs in the structural materials of geothermal industry. The presence of CO2 influences the formation of various corrosion products. This research investigates the effect of dissolved CO2 in acidic brines on the corrosion behavior of AISI 4140 steel at atmospheric pressure. The brines were the standard brine, Ca-free brine, and high-salinity brine. The corrosion behavior was studied using electrochemical and immersion tests. A cyclic polarization test showed that the corrosion rate was higher in dissolved CO2 brine than in non-CO2 brine, and an immersion test demonstrated a similar result. …
Comparative Photovoltaics Of P3ht:N2200 And P3ht: Small-Gap Fullerene Ethyl-Nipecotate Bulk Heterojunction Structures, Md. Nasir Uddin, Rafiqul Islam, Muhibur Rahman, Nazia Chawdhury
Comparative Photovoltaics Of P3ht:N2200 And P3ht: Small-Gap Fullerene Ethyl-Nipecotate Bulk Heterojunction Structures, Md. Nasir Uddin, Rafiqul Islam, Muhibur Rahman, Nazia Chawdhury
Makara Journal of Science
This work deals with the study on the optical absorption and photoluminescence spectra of a p-type organic semiconducting polymer, regioregular poly 3-hexylthiophene-2,5-diyl (P3HT) and the absorption spectra of an n-type fullerene-based small-gap fullerene-ethyl nipecotate (Fullerene-EN) and a non-fullerene-based polynaphthalene bithiophene (N2200) semiconducting materials. The band gap of P3HT, N2200, and small-gap fullerene-ethyl nipecotate are 2.42, 1.65, and 1.51 eV, respectively, calculated from experimental results through the Tauc equation. Active layers with blends of P3HT and small-gap fullerene-ethyl nipecotate and P3HT and N2200 have been used to fabricate bulk heterojunction (BHJ) structures. The P3HT:N2200 BHJ structure follows the current density versus …