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Full-Text Articles in Physics

Quantum Inspired Symmetries In Laser Engineering, Mohammad Hosain Teimourpour Jan 2017

Quantum Inspired Symmetries In Laser Engineering, Mohammad Hosain Teimourpour

Dissertations, Master's Theses and Master's Reports

In this thesis, quantum inspired symmetries including Parity-Time (PT) symmetry and Supersymmetry (SUSY) have been studied in the context of non-Hermitian engineered laser systems. This thesis starts with a short review of semiconductor lasers theory in second chapter, followed by an introduction to quantum inspired symmetries: PT symmetry and SUSY in optics and photonics in chapter three.

In chapter four, we have studied the robustness and mode selectivity in PT symmetric lasers. We investigate two important aspects of PT symmetric photonic molecule lasers, namely the robustness of their single longitudinal mode operation against instabilities triggered by spectral hole burning effects, …


Optical Injection Unlocking For Cavity Ringdown Spectroscopy, Gregory A. Bostrom, Andrew L. Rice, Dean B. Atkinson Jul 2014

Optical Injection Unlocking For Cavity Ringdown Spectroscopy, Gregory A. Bostrom, Andrew L. Rice, Dean B. Atkinson

Physics Faculty Publications and Presentations

Continuous wave cavity ringdown spectroscopy requires a rapid termination of the injection of light into the cavity to initiate the decay (i.e., ringdown) event. We demonstrate a technique that accomplishes this through pulsed optical injection of a second laser into the main laser, resulting in 20-100 MHz frequency shifts in the otherwise cavity-locked main laser sufficient to create ringdown events at 3.5 kHz. Data on the frequency shift as a function of both main laser current and relative wavelength are presented, 88 well 88 a demonstration that single exponential decays are maintained in the process.


Zinc Oxide Random Laser Threshold Enhancement Via Addition Of Passive Scatterers, Zachariah M. Peterson, Rolf Könenkamp, Robert Campbell Word May 2014

Zinc Oxide Random Laser Threshold Enhancement Via Addition Of Passive Scatterers, Zachariah M. Peterson, Rolf Könenkamp, Robert Campbell Word

Student Research Symposium

Zinc oxide (ZnO) is a wide bandgap n-type semiconductor with a variety of optical and electrical applications and many methods of fabrication. Strong optical scattering and photoluminescence from ZnO nanoparticles and films makes the material an ideal candidate for a random laser. Previous studies have shown both incoherent and coherent random lasing from ZnO films and particles agglomerations. When used as a passive scatterer in a laser dye gain medium, the addition of ZnO has been shown to improve the threshold for lasing. By combining active scattering ZnO with a passive scatterer, MgO, we show here that the lasing threshold …


Injection Locking Of Semiconductor Mode-Locked Lasers For Long-Term Stability Of Widely Tunable Frequency Combs, Charles Williams Jan 2013

Injection Locking Of Semiconductor Mode-Locked Lasers For Long-Term Stability Of Widely Tunable Frequency Combs, Charles Williams

Electronic Theses and Dissertations

Harmonically mode-locked semiconductor lasers with external ring cavities offer high repetition rate pulse trains while maintaining low optical linewidth via long cavity storage times. Single frequency injection locking generates widely-spaced and tunable frequency combs from these harmonically mode-locked lasers, while stabilizing the optical frequencies. The output is stabilized long-term with the help of a feedback loop utilizing either a novel technique based on Pound-Drever-Hall stabilization or by polarization spectroscopy. Error signals of both techniques are simulated and compared to experimentally obtained signals. Frequency combs spaced by 2.5 GHz and ~10 GHz are generated, with demonstrated optical sidemode suppression of unwanted …


Excitability In Optically Injected Semiconductor Lasers: Contrasting Quantum- Well- And Quantum-Dot-Based Devices, Bryan Kelleher, C. Bonatto, Guillaume Huyet, Stephen P. Hegarty Feb 2011

Excitability In Optically Injected Semiconductor Lasers: Contrasting Quantum- Well- And Quantum-Dot-Based Devices, Bryan Kelleher, C. Bonatto, Guillaume Huyet, Stephen P. Hegarty

Cappa Publications

Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.


Low Noise And Low Repetition Rate Semiconductor-Based Mode-Locked Lasers, Dimitrios Mandridis Jan 2011

Low Noise And Low Repetition Rate Semiconductor-Based Mode-Locked Lasers, Dimitrios Mandridis

Electronic Theses and Dissertations

The topic of this dissertation is the development of low repetition rate and low noise semiconductor-based laser sources with a focus on linearly chirped pulse laser sources. In the past decade chirped optical pulses have found a plethora of applications such as photonic analogto-digital conversion, optical coherence tomography, laser ranging, etc. This dissertation analyzes the aforementioned applications of linearly chirped pulses and their technical requirements, as well as the performance of previously demonstrated chirped pulse laser sources. Moreover, the focus is shifted to a specific application of the linearly chirped pulses, timestretched photonic analog-to-digital conversion (TS ADC). The challenges of …


New Laser Technologies Analysis Of Quantum Dot And Lithographic Laser Diodes, Abdullah Demir Jan 2010

New Laser Technologies Analysis Of Quantum Dot And Lithographic Laser Diodes, Abdullah Demir

Electronic Theses and Dissertations

The first part of this dissertation presents a comprehensive study of quantum dot (QD) lasers threshold characteristics. The threshold temperature dependence of a QD laser diode is studied in different limits of p-doping, hole level spacing and inhomogeneous broadening. Theoretical analysis shows that the threshold current of a QD laser in the limit of uniform QDs is not temperature independent and actually more temperature sensitive than the quantum well laser. The results also explain the experimental trends of negative characteristic temperature observed in QD lasers and clarify how the carrier distribution mechanisms inside and among the QDs affect the threshold …


Low Noise, High Repetition Rate Semiconductor-Based Mode-Locked Lasers For Signal Processing And Coherent Communications, Franklyn Quinlan Jan 2008

Low Noise, High Repetition Rate Semiconductor-Based Mode-Locked Lasers For Signal Processing And Coherent Communications, Franklyn Quinlan

Electronic Theses and Dissertations

This dissertation details work on high repetition rate semiconductor mode-locked lasers. The qualities of stable pulse trains and stable optical frequency content are the focus of the work performed. First, applications of such lasers are reviewed with particular attention to applications only realizable with laser performance such as presented in this dissertation. Sources of timing jitter are also reviewed, as are techniques by which the timing jitter of a 10 GHz optical pulse train may be measured. Experimental results begin with an exploration of the consequences on the timing and amplitude jitter of the phase noise of an RF source …


Integrated Wavelength Stabilization Of Broad Area Semiconductor Lasers Using A Dual Grating Reflector, Jason O'Daniel Jan 2006

Integrated Wavelength Stabilization Of Broad Area Semiconductor Lasers Using A Dual Grating Reflector, Jason O'Daniel

Electronic Theses and Dissertations

A new fully integrated wavelength stabilization scheme based on grating-coupled surface-emitting lasers is explored. This wavelength stabilization scheme relies on two gratings. The first grating is fabricated on the p-side of the semiconductor laser in close proximity to the laser waveguide such that it couples light out of the guided mode of the waveguide into a propagating mode in the substrate; this grating is known as the grating coupler. The second grating is fabricated on the n-side of the substrate such that for the stabilization wavelength, this second grating operates in the Littrow condition and is known as the feedback …


Dispersion-Managed Breathing-Mode Semiconductor Mode-Locked Ring Laser, Bojan Resan Jan 2004

Dispersion-Managed Breathing-Mode Semiconductor Mode-Locked Ring Laser, Bojan Resan

Electronic Theses and Dissertations

A novel dispersion-managed breathing-mode semiconductor mode-locked ring laser is developed. The "breathing-mode" designation derives from the fact that intracavity pulses are alternately stretched and compressed as they circulate around the ring resonator. The pulses are stretched before entering the semiconductor gain medium to minimize the detrimental strong integrating self-phase modulation and to enable efficient pulse amplification. Subsequently compressed pulses facilitate bleaching the semiconductor saturable absorber. The intracavity pulse compression ratio is higher than 50. Down chirping when compared to up chirping allows broader mode-locked spectra and shorter pulse generation owing to temporal and spectral semiconductor gain dynamics. Pulses as short …


Monolithic Integration Of Dual Optical Elements On High Power Semicond, Laurent Vaissie Jan 2004

Monolithic Integration Of Dual Optical Elements On High Power Semicond, Laurent Vaissie

Electronic Theses and Dissertations

This dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to control the grating coupler duty cycle and shape. The near-field intensity profile outcoupled by the grating is modeled using a combination of finite-difference time domain (FDTD) analysis of the nonuniform …


Optical Characterization Of Antimony-Based, Types-I And Ii, Multiple Quantum-Well Semiconductor Structures For Mid-Infrared Laser Applications, Edward G. Ferguson Mar 2003

Optical Characterization Of Antimony-Based, Types-I And Ii, Multiple Quantum-Well Semiconductor Structures For Mid-Infrared Laser Applications, Edward G. Ferguson

Theses and Dissertations

This experiment characterizes antimony-based, multiple quantum-well, types-I and -II, semiconductor samples designed for laser applications. The samples emit light in the 3-5-micron range to exploit an atmospheric transmission window, making them ideal for infrared (IR)-seeking missile countermeasures. Photoluminescence (PL) spectra were collected and yielded bandgap (E(sub g)) dependence-on-temperature relationships. The type-I sample was found to follow the Varshni equation, while the type-II samples showed a rise with temperature in a portion of the curve that should be linear according to the Varshni equation. The type-II samples followed the Varshni equation well at higher temperature. The PL study indicated that the …


Four-Wave Mixing And Optical Phase Conjugation In Vertical Cavity Surface Emitting Devices, Gregory J. Vansuch Jan 1997

Four-Wave Mixing And Optical Phase Conjugation In Vertical Cavity Surface Emitting Devices, Gregory J. Vansuch

Theses and Dissertations

Four-wave mixing (FWM), a nonlinear optical process, was investigated in resonant cavity light emitting diodes (RCLEDs) and vertical cavity surface emitting lasers (VCSELs) below lasing threshold. These semiconductor photonic devices consisted of an optical gain region of quantum wells sandwiched between two distributed Bragg reflector (DBR) mirrors. Pump and probe lasers were injected into the devices to generate FWM. The dependence of FWM on bias current, pump laser power, and spectral and spatial separation between pump and probe lasers was investigated experimentally. A computer model of FWM based on the wave and carrier density equations was developed and agreed well …


Experimental Investigation And Computer Modeling Of Optical Switching In Distributed Bragg Reflector And Vertical Cavity Surface Emitting Laser Structures, Richard J. Bagnell Dec 1995

Experimental Investigation And Computer Modeling Of Optical Switching In Distributed Bragg Reflector And Vertical Cavity Surface Emitting Laser Structures, Richard J. Bagnell

Theses and Dissertations

The optical switching capabilities of Distributed Bragg Reflector (DBR) structures, including Vertical Cavity Surface Emitting Lasers (VCSELs) are examined. Reflectivity switching is demonstrated using both thermal and carrier generated effects to alter the DBR/VCSEL layers' refractive indices. Optical bistability is demonstrated at room temperature, under CW photopumped excitation. The optical bistability hysteresis is controllable by spectral location of the pump on the stop band edge. In the VCSEL, reflective bistability is also evidenced; additionally, this bistability is accompanied by a bistability in the VCSEL lasing output intensity, spot size, and wavelength. Modeling of the DBR/VCSEL thermally induced bistability was accomplished …


Micromirror Array Control Of A Phase-Locked Laser Diode Array, Carl J. Christensen Dec 1995

Micromirror Array Control Of A Phase-Locked Laser Diode Array, Carl J. Christensen

Theses and Dissertations

A ten element micromirror array has been designed, fabricated, and employed to control the far field irradiance pattern of a phase locked laser diode array. The laser array used in this experiment was a ten element, gain guided array lasing at a nominal wavelength of 828 nm and operating in the it out of phase supermode. The laser's near field irradiance was imaged onto a micromirror array, where the it phase differences between adjacent laser elements were corrected. This was accomplished by moving the micromirrors with individually applied voltages. The result was the desirable single lobed far field pattern, placing …


Characterization Of An Lcd For Use As A Programmable Phase Shifter To Produce A Single-Lobed Far-Field Pattern In A Phased Array, Gregory S. Kenyon Dec 1993

Characterization Of An Lcd For Use As A Programmable Phase Shifter To Produce A Single-Lobed Far-Field Pattern In A Phased Array, Gregory S. Kenyon

Theses and Dissertations

The liquid crystal display LCD from an inexpensive pocket television was converted to a spatial light modulator SLM for the purpose of altering the phase front of a ten element diode laser array to produce a single lobe far field pattern. Characterization of the SLM determined the amount of phase shift, amplitude modulation and polarization rotation properties. Nonuniformities within the phase shifter and insufficient phase shift prevented the formation of a single lobe. However, a very limited phase grating was created and analyzed. LCDs from inexpensive commercial pocket televisions were found unsuitable for use as phase shifting spatial light modulators.


Characterization Of Nonlinear Effects In Optically Pumped Vertical Cavity Surface Emitting Lasers, Scott L. Brown Dec 1993

Characterization Of Nonlinear Effects In Optically Pumped Vertical Cavity Surface Emitting Lasers, Scott L. Brown

Theses and Dissertations

The nonlinear characteristics of optically pumped Vertical Cavity Surface Emitting Lasers VCSELs are identified, isolated, and quantified. Three different VCSELs are evaluated including two with gain regions of bulk GaAs operating at 875nm and one multi-quantum well MQW InGaAs VCSEL operating at 950nm. The nonlinearities evaluated include those due to cavity temperature, carrier injection, and internal lasing field. The VCSELs are pumped by a picosecondfemtosecond TiSapphire laser which is configured to operate in CW, gated CW minimum gate width was 200ns, picosecond, and gated picosecond modes. A linear relationship is shown between wavelength and substrate temperature, cavity temperature, and injected …