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Full-Text Articles in Physics
A Computationally-Efficient Bound For The Variance Of Measuring The Orientation Of Single Molecules, Tingting Wu, Tianben Ding, Hesam Mazidi, Oumeng Zhang, Matthew D. Lew
A Computationally-Efficient Bound For The Variance Of Measuring The Orientation Of Single Molecules, Tingting Wu, Tianben Ding, Hesam Mazidi, Oumeng Zhang, Matthew D. Lew
Electrical & Systems Engineering Publications and Presentations
Modulating the polarization of excitation light, resolving the polarization of emitted fluorescence, and point spread function (PSF) engineering have been widely leveraged for measuring the orientation of single molecules. Typically, the performance of these techniques is optimized and quantified using the Cramér-Rao bound (CRB), which describes the best possible measurement variance of an unbiased estimator. However, CRB is a local measure and requires exhaustive sampling across the measurement space to fully characterize measurement precision. We develop a global variance upper bound (VUB) for fast quantification and comparison of orientation measurement techniques. Our VUB tightly bounds the diagonal elements of the …
Modeling Free-Carrier Absorption And Avalanching By Ultrashort Laser Pulses, Jeremy Gulley
Modeling Free-Carrier Absorption And Avalanching By Ultrashort Laser Pulses, Jeremy Gulley
Jeremy R. Gulley
In the past decade it was demonstrated experimentally that negatively-chirped laser pulses can lower the surface LIDT for wide band-gap materials by decreasing the number of photons required for photoionization on the leading edge of the pulse. Similarly, simulations have shown that positively-chirped pulses resulting from selffocusing and self-phase modulation in bulk dielectrics can alter the onset of laser-induced material modifications by increasing the number of photons required for photoionization on the leading edge of the pulse. However, the role of multi-chromatic effects in free-carrier absorption and avalanching has yet to be addressed. In this work a frequency-selective model of …
Short Terahertz Pulses From Semiconductor Surfaces: The Importance Of Bulk Difference‐Frequency Mixing, Peter N. Saeta, Benjamin I. Greene, Shun Lien Chuang
Short Terahertz Pulses From Semiconductor Surfaces: The Importance Of Bulk Difference‐Frequency Mixing, Peter N. Saeta, Benjamin I. Greene, Shun Lien Chuang
All HMC Faculty Publications and Research
The crystallographic orientation dependence of the far‐infrared (FIR) light generated at the (001) surface of a zincblende semiconductor is shown to derive principally from bulk difference‐frequency mixing. A strong modulation is observed for 1‐GW/cm2 pulses on InP, which demonstrates that the radiated FIR wave produced by bulk optical rectification is comparable to that generated by the transport of photoinjected carriers. Using the bulk rectification light as a clock, we show that more than 95% of the light produced from an InP (111) crystal by 100‐fs, 100‐μJ pulses is generated in a time shorter than the excitation pulse.