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Low-Temperature Luminescence Spectrum Of A Fine-Grained Cdte Layer In A Film Heterostructure N-Cds/P-Cdte, N. Kh Yuldashev

Scientific-technical journal

It is shown that the spectrum of low-temperature (4.2 K) edge photoluminescence of a thin and fine-grained (h,d=1mkm) polycrystalline CdTe layer in an n-CdS/p-CdTe film heterostructure upon frontal excitation by an Ar+ laser with a flux power of -4.8 mW/mm² consists of the dominant А - lines of intrinsic (e-h) emission with a half-width6-8 meV and a short-wavelength shift 30 meV of the red boundary relative to Eg , its LO-phonon repetition (B-lines, 40meV) and a broad D-line (40 meV) of surface-interface luminescence with a maximum at a frequency of 150eV. The back illumination of the photoresistive CdS layer …