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Optical Characterization Of Antimony-Based, Types-I And Ii, Multiple Quantum-Well Semiconductor Structures For Mid-Infrared Laser Applications, Edward G. Ferguson
Optical Characterization Of Antimony-Based, Types-I And Ii, Multiple Quantum-Well Semiconductor Structures For Mid-Infrared Laser Applications, Edward G. Ferguson
Theses and Dissertations
This experiment characterizes antimony-based, multiple quantum-well, types-I and -II, semiconductor samples designed for laser applications. The samples emit light in the 3-5-micron range to exploit an atmospheric transmission window, making them ideal for infrared (IR)-seeking missile countermeasures. Photoluminescence (PL) spectra were collected and yielded bandgap (E(sub g)) dependence-on-temperature relationships. The type-I sample was found to follow the Varshni equation, while the type-II samples showed a rise with temperature in a portion of the curve that should be linear according to the Varshni equation. The type-II samples followed the Varshni equation well at higher temperature. The PL study indicated that the …