Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physics
Current Transportation Processes In P-N-N+ - Structures Under Saturation Of Recombination Rate, Abat K. Uteniyazov, A Leyderman, M Nsanbaev, Sh Annayeva
Current Transportation Processes In P-N-N+ - Structures Under Saturation Of Recombination Rate, Abat K. Uteniyazov, A Leyderman, M Nsanbaev, Sh Annayeva
Karakalpak Scientific Journal
In the article, the model of the recombination of non - equilibrium carriers through a pair recombination complex of the donor-acceptor pair type is studied under conditions when the concentration of such paired complexes changes (decreases) during the excitation of the material. Also, the article describes that the injection into the p-n-n+ - structure can lead to fundamental changes in the distribution of the concentration of free carriers, especially, to the appearance of a periodic term depending on the concentration of the sample length (instead of the usual exponential dependence).
Influence Of Laterial State Of Pair Impurity Complex On Recombination Processes In Semiconductors, L Yu Leyderman, R A. Ayukhanov, Abat Uteniyazov, E S. Esenbaeva, Sh X. Annayeva
Influence Of Laterial State Of Pair Impurity Complex On Recombination Processes In Semiconductors, L Yu Leyderman, R A. Ayukhanov, Abat Uteniyazov, E S. Esenbaeva, Sh X. Annayeva
Karakalpak Scientific Journal
The paper analyzes the question of the possible influence of the lateral state of a paired impurity complex on the recombination processes. It is shown that the lateral state of the paired impurity complex does not affect the recombination processes of nonequilibrium carriers - they go through that component of the impurity complex that exchanges carriers with both bands (in this particular case, through the component). The second component of the complex () can apparently play some role in the processes of carrier attachment.