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Structure And Electrophysical Properties Of A Solid Solution (Gaas1-Δbiδ)1-X-Y(Ge2)X(Znse)Y, S.Z. Zainabidinov, I.N. Karimov, Hotamjon Mansurov, Akramjon Boboev, Dilkhayotjon Pulatjon Ugli Abdurakhimov
Structure And Electrophysical Properties Of A Solid Solution (Gaas1-Δbiδ)1-X-Y(Ge2)X(Znse)Y, S.Z. Zainabidinov, I.N. Karimov, Hotamjon Mansurov, Akramjon Boboev, Dilkhayotjon Pulatjon Ugli Abdurakhimov
Scientific Bulletin. Physical and Mathematical Research
This paper shows the possibility of growing a single-crystal solid solution of substitution (GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y on GaAs substrates by liquid-phase epitaxy from a bismuthcontaining solution-melt. The grown films had a ptype of conductivity with a current carrier concentration of 1,86·1017 сm-3, a mobility of р = 300 cm2/V·s, and a resistivity of 0,13 Ohms·cm. Structural studies have shown that the epitaxial films have a sphalerite structure of the ZnS type and are monocrystalline with an orientation of (100). The crystal lattice parameter of the film was af = 0,56697 nm. Studies of current-voltage characteris-tics of n-GaAs – p-(GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y heterostructures at different …