Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Publication Year
- Publication
- Publication Type
Articles 1 - 13 of 13
Full-Text Articles in Physics
Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui
Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui
Electronic Theses and Dissertations
Multidimensional coherent spectroscopy (MDCS) is a quickly growing field that has a lot of advantages over more conventional forms of spectroscopy. These advantages all come from the fact that MDCS allows us to get time resolved correlated emission and absorption spectra using very precisely chosen interactions between the density matrix and the excitation laser. MDCS spectra gives the researcher a lot of information that can be extracted purely through qualitative analysis. This is possible because state couplings are entirely separated on the spectra, and once we know how to read the data, we can see how carriers transport in the …
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Physics Undergraduate Honors Theses
Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …
Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis
Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis
Dissertations, Theses, and Capstone Projects
In this thesis, we discuss the growth procedure and the characterization results obtained for epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI semiconductors. We have investigated the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots and the use of (Zn)CdTe/ZnCdSe QDs for intermediate band solar cell (IBSC). Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to ~1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were also probed. A new growth sequence for type-II (Zn)CdTe/ZnCdSe (QDs) was …
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Materials Science and Engineering Faculty Publications and Presentations
Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we …
Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick
Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick
Theses and Dissertations (Comprehensive)
Materials at the nanoscale have different chemical, structural, and optoelectrical properties compared to their bulk counterparts. As a result, such materials, called nanomaterials, exhibit observable differences in certain physical phenomena. One such resulting phenomenon called the piezoelectric effect has played a crucial role in miniature self-powering electronic devices called nanogenerators which are fabricated by using nanostructures, such as nanowires, nanorods, and nanofilms. These devices are capable of harvesting electrical energy by inducing mechanical strain on the individual nanostructures. Electrical energy created in this manner does not have environmental limitations. In this thesis, important coupled effects, such as the nonlinear piezoelectric …
Nanostructured Organic/Inorganic Semicondutor Photovoltaics: Investigation On Morphology And Optoelectronics Performance, Aruna Wanninayake
Nanostructured Organic/Inorganic Semicondutor Photovoltaics: Investigation On Morphology And Optoelectronics Performance, Aruna Wanninayake
Theses and Dissertations
Organic solar cell is a promising technology because of the versatility of organic materials in terms of tunability of their electrical and optical properties. In addition, their relative insensitivity to film imperfections potentially allows for very low-cost high-throughput roll-to-roll processing. However, the power conversion efficiency of organic solar cell is still limited and needs to be improved in order to be competitive with grid parity. This work is focused on the design and characterization of a new organic/inorganic hybrid device to enhance the efficiency factors of bilayer organic solar cells such as: light absorption, exciton diffusion, exciton dissociation, charge transportation …
Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus
Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus
Dissertations, Theses, and Capstone Projects
The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for …
Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit
Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to drive patterning solutions that enable devices with higher memory storage capacity, faster computing performance, lower cost per transistors, and higher transistor density. These developments in the field of semiconductor manufacturing along with the overall minimization of the size of transistors require cutting-edge metrology tools for characterization.
Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha
Legacy Theses & Dissertations (2009 - 2024)
The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Faculty Publications
Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …
The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim
The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim
Undergraduate Research Opportunities Program (UROP)
Gallium nitride (GaN) is a group-III nitride semiconductor; which may prove useful in developing optical instruments that operate under high ambient pressures. The purpose of this project is to examine the properties of GaN under varying conditions. The methods used in this experiment consist of modeling free energy as a function of lattice constants; calculating bond lengths, bond strengths, and bulk moduli; and comparing the resultant data with values in published literature. We will also compare these results with experimental data drawn from x-ray diffraction scans. By doing so, we hope to determine whether gallium nitride is suitable for use …
Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips
Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips
Theses and Dissertations
Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …
Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan
Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan
Theses and Dissertations
The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …