Open Access. Powered by Scholars. Published by Universities.®
- Keyword
-
- Thin films (2)
- Activation energy (1)
- Activation volume (1)
- Capacitance measurement (1)
- Complementary metal oxide semiconductors (1)
-
- Constant strains (1)
- Dielectric devices (1)
- Dislocation densities (1)
- Dislocation velocities (1)
- Electronic mechanisms (1)
- Excitation energy density (1)
- Excitation lasers (1)
- Laser assisted growth (1)
- Laser energy density (1)
- MOS capacitors (1)
- Memory applications (1)
- Metal insulator transition (1)
- Metallic compounds (1)
- Morphology changes (1)
- Nanoindentation (1)
- Nanosecond pulsed laser (1)
- Polycrystalline nickels (1)
- Pulsed laser deposition (1)
- Scanning tunneling microscopy (1)
- Semiconductor quantum dots (1)
- Substrate temperature (1)
- Uniaxial experiments (1)
- Publication
- Publication Type
Articles 1 - 5 of 5
Full-Text Articles in Physics
Section Abstracts: Astronomy, Mathematics, And Physics With Materials Science
Section Abstracts: Astronomy, Mathematics, And Physics With Materials Science
Virginia Journal of Science
Abstracts of the Astronomy, Mathematics, and Physics with Materials Science Section for the 92nd Annual Meeting of the Virginia Academy of Science, May 13-15, 2014, Virginia Commonwealth University, Richmond, Virginia
Repeated Load Relaxation Testing Of Pure Polycrystalline Nickel At Room Temperature Using Nanoindentation, D. E. Stegall, M. A. Mamun, B. Crawford, A, A. Elmustafa
Repeated Load Relaxation Testing Of Pure Polycrystalline Nickel At Room Temperature Using Nanoindentation, D. E. Stegall, M. A. Mamun, B. Crawford, A, A. Elmustafa
Mechanical & Aerospace Engineering Faculty Publications
We present the results of repeated relaxation tests using nanoindentation to derive the activation volume of the dislocation velocity and the ratios of the dislocation density and dislocation velocity. An experimental technique, based on classical uniaxial relaxation experiments, was developed to establish a constant strain during repeated load relaxation transients and then to calculate the stiffness of unloading, and therefore the hardness, across the transients with acceptable results. We found that the activation volume of the dislocation velocity from our nanoindentation methodology was in good agreement when compared to the same reported for uniaxial experiments. © 2014 AIP Publishing LLC.
Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali
Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm 2. Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …
Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Electrical & Computer Engineering Faculty Publications
Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …
Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart
Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
Among the many vanadium suboxides and different stoichiometries, VO2 has received considerable attention due to its remarkable metal-insulator transition (MIT) behavior, which causes a significant reversible change in its electrical and optical properties occurring across the phase transition at 67°C. The initially amorphous VO2 thin films were fabricated by the emerging, Atomic Layer Deposition (ALD) technique with (tetrakis[ethylmethylamino]vanadium) {V(NEtMe)4} as precursor and H2O vapor as oxidation agent. For benchmarking we have also used the RF Magnetron Sputtering technique to deposit metallic vanadium thin films, which were later oxidized during furnace annealing. Post annealing of …