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Optical And Electrical Characterization Of Bulk Grown Indium-Gallium-Arsenide Alloys, Austin C. Bergstrom

Theses and Dissertations

Advances in crystal growth techniques have allowed increased quality in growth of bulk ternary In_xGa_1-xAs. Here, the optical and electrical properties of samples grown through the vertical Bridgman (or multi-component zone melting growth) method have been investigated through photoluminescence spectroscopy and Hall effect measurements. Indium mole fractions varied from 0.75 for 1. Hall effect measurements at temperatures ranging from 10 to 300 K revealed moderate n-type doping with carrier concentrations ranging from 1.5 to 9.6×10¹⁶ cm^-3 at 10 to 15 K. Carriers from deep donor levels became appreciable between 50 and 100 K. Hall …