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Full-Text Articles in Physics
Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev
Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev
Eurasian Journal of Physics and Functional Materials
The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.
Obtaining Homogeneous Silicon In The Process Of Alumothermic Reduction Of Silicon Dioxide, G. N. Chumikov, V. V. Klimenov, N. S. Tokmoldin, S. Zh. Tokmoldin
Obtaining Homogeneous Silicon In The Process Of Alumothermic Reduction Of Silicon Dioxide, G. N. Chumikov, V. V. Klimenov, N. S. Tokmoldin, S. Zh. Tokmoldin
Eurasian Journal of Physics and Functional Materials
The influence of charge components on emergence of a homogeneous phase of silicon in the process of silicon dioxide reduction by aluminium has been studied. Optimal process parameters affecting the quality of the end product have been identified. These include the ratio of components of the synthetic charge (CaO, SiO2 , CaF2 ), the optimal amount of SiO2 , the optimal amount of a reducing agent (Al) and the optimal Si/slag ratio. The homogeneous phase of silicon is easily separated from the slag, which contributes to the reduction of waste silicon during further technological operations.
Investigation Of Optical Second Harmonic Generation From Si (100) With Process Tailored Surface & Embedded Ag Nanostructures For Advanced Si Nonlinear Nanophotonics, Gourav Bhowmik
Legacy Theses & Dissertations (2009 - 2024)
The challenge of current microelectronic architecture in transmission bandwidth and power consumption can be potentially solved by using silicon photonics technologies that are compatible with modern CMOS fabrication. One of the critical active photonic devices for Si photonics is a Si based optical modulator. Most of the reported silicon modulators rely on the free carrier plasma dispersion effect. In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer or a microring resonator to achieve intensity modulation, rendering them difficult for chip-level implementation due to a large footprint …