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Full-Text Articles in Physics
Conductivity Reversal In Silicon Doped With S And Zn, Abdulaziz Shavkatovich Mavlyanov, Nurullo Zikrillayev, Maruf Khaqqulov, Erkin Khaltursunov, Farhod Shakarov
Conductivity Reversal In Silicon Doped With S And Zn, Abdulaziz Shavkatovich Mavlyanov, Nurullo Zikrillayev, Maruf Khaqqulov, Erkin Khaltursunov, Farhod Shakarov
Acta of Turin Polytechnic University in Tashkent
Based on experimental results of investigation of type of conductivity of silicon samples doped with sulfur at Т=1250°С, and thereafter with zinc at T=1200°С, the authors put forward the hypothesis about self-assembly of “binary” elementary cells where atoms of elements of group II (Zn) and IV (S) allegedly form ZnS-type compounds in Si. The thermodynamic conditions required for buildup of such elementary cells and assembly of various associations in the basic lattice of silicon including self-assembly of ZnS clusters were theoretically determined and experimentally justified.
Optimal Technological Modes Of Ion Implantation And Following Annealing For Forming Thin Nanosized Films Of Silicides, A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Optimal Technological Modes Of Ion Implantation And Following Annealing For Forming Thin Nanosized Films Of Silicides, A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Eurasian Journal of Physics and Functional Materials
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.
Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev
Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev
Eurasian Journal of Physics and Functional Materials
The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.
Obtaining Homogeneous Silicon In The Process Of Alumothermic Reduction Of Silicon Dioxide, G. N. Chumikov, V. V. Klimenov, N. S. Tokmoldin, S. Zh. Tokmoldin
Obtaining Homogeneous Silicon In The Process Of Alumothermic Reduction Of Silicon Dioxide, G. N. Chumikov, V. V. Klimenov, N. S. Tokmoldin, S. Zh. Tokmoldin
Eurasian Journal of Physics and Functional Materials
The influence of charge components on emergence of a homogeneous phase of silicon in the process of silicon dioxide reduction by aluminium has been studied. Optimal process parameters affecting the quality of the end product have been identified. These include the ratio of components of the synthetic charge (CaO, SiO2 , CaF2 ), the optimal amount of SiO2 , the optimal amount of a reducing agent (Al) and the optimal Si/slag ratio. The homogeneous phase of silicon is easily separated from the slag, which contributes to the reduction of waste silicon during further technological operations.