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Full-Text Articles in Physics
Defect-Free Plastic Deformation Through Dimensionality Reduction And Self-Annihilation Of Topological Defects In Crystalline Solids, Yipeng Gao, Yongfeng Zhang, Larry K. Aagesen, Jianguo Yu, Min Long, Yunzhi Wang
Defect-Free Plastic Deformation Through Dimensionality Reduction And Self-Annihilation Of Topological Defects In Crystalline Solids, Yipeng Gao, Yongfeng Zhang, Larry K. Aagesen, Jianguo Yu, Min Long, Yunzhi Wang
Computer Science Faculty Publications and Presentations
As a signature of symmetry-breaking processes, the generation and annihilation of topological defects (domain walls, strings, etc.) are of great interest in condensed matter physics and cosmology. Here we propose a distinctive self-organization process through phase transitions, in which all the generated topological defects are dimensionality reduced and self-annihilated. In crystalline solids, such a unique mechanism allows a perfect single crystal after plastic deformation, which originates from the coupling of different types of broken symmetries.
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Materials Science and Engineering Faculty Publications and Presentations
Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we …