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Articles 1 - 30 of 37
Full-Text Articles in Physics
Quantum Efficiency And Lifetime Study For Negative Electron Affinity Gaas Nanopillar Array Photocathode, Md Aziz Ar Rahman, Md Abdullah Mamun, Shukui Zhang, Hani E. Elsayed-Ali
Quantum Efficiency And Lifetime Study For Negative Electron Affinity Gaas Nanopillar Array Photocathode, Md Aziz Ar Rahman, Md Abdullah Mamun, Shukui Zhang, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Recent studies showed significant improvement in quantum efficiency (QE) by negative electron affinity (NEA) GaAs nanopillar array (NPA) photocathodes over their flat surface peers, particularly at 500 ─ 800 nm waveband. However, the underlying physics is yet to be well understood for further improvement in its performance. In this report, NEA GaAs NPA photocathodes with different dimensions were studied. The diameter of the nanopillars varied from 200 ─ 360 nm, the height varied from 230 ─ 1000 nm and the periodicity varied from 470 ─ 630 nm. The QE and photocathode lifetime were measured. Mie-resonance enhancement was observed at tunable …
Deep Learning Based Superconducting Radio-Frequency Cavity Fault Classification At Jefferson Laboratory, Lasitha Vidyaratne, Adam Carpenter, Tom Powers, Chris Tennant, Khan M. Iftekharuddin, Md. Monibor Rahman, Anna S. Shabalina
Deep Learning Based Superconducting Radio-Frequency Cavity Fault Classification At Jefferson Laboratory, Lasitha Vidyaratne, Adam Carpenter, Tom Powers, Chris Tennant, Khan M. Iftekharuddin, Md. Monibor Rahman, Anna S. Shabalina
Electrical & Computer Engineering Faculty Publications
This work investigates the efficacy of deep learning (DL) for classifying C100 superconducting radio-frequency (SRF) cavity faults in the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab. CEBAF is a large, high-power continuous wave recirculating linac that utilizes 418 SRF cavities to accelerate electrons up to 12 GeV. Recent upgrades to CEBAF include installation of 11 new cryomodules (88 cavities) equipped with a low-level RF system that records RF time-series data from each cavity at the onset of an RF failure. Typically, subject matter experts (SME) analyze this data to determine the fault type and identify the cavity of …
Beamline For E-Beam Processing At Uitf, G. Ciovati, C. Bott, S. Gregory, F. Hannon, Xi Li, M. Mccaughan, R. Pearce, M. Poelker, H. Vennekate
Beamline For E-Beam Processing At Uitf, G. Ciovati, C. Bott, S. Gregory, F. Hannon, Xi Li, M. Mccaughan, R. Pearce, M. Poelker, H. Vennekate
Electrical & Computer Engineering Faculty Publications
No abstract provided.
Real-Time Cavity Fault Prediction In Cebaf Using Deep Learning, Md. M. Rahman, K. Iftekharuddin, A. Carptenter, T. Mcguckin, C. Tennant, L. Vidyaratne, Sandra Biedron (Ed.), Evgenya Simakov (Ed.), Stephen Milton (Ed.), Petr M. Anisimov (Ed.), Volker R.W. Schaa (Ed.)
Real-Time Cavity Fault Prediction In Cebaf Using Deep Learning, Md. M. Rahman, K. Iftekharuddin, A. Carptenter, T. Mcguckin, C. Tennant, L. Vidyaratne, Sandra Biedron (Ed.), Evgenya Simakov (Ed.), Stephen Milton (Ed.), Petr M. Anisimov (Ed.), Volker R.W. Schaa (Ed.)
Electrical & Computer Engineering Faculty Publications
Data-driven prediction of future faults is a major research area for many industrial applications. In this work, we present a new procedure of real-time fault prediction for superconducting radio-frequency (SRF) cavities at the Continuous Electron Beam Accelerator Facility (CEBAF) using deep learning. CEBAF has been afflicted by frequent downtime caused by SRF cavity faults. We perform fault prediction using pre-fault RF signals from C100-type cryomodules. Using the pre-fault signal information, the new algorithm predicts the type of cavity fault before the actual onset. The early prediction may enable potential mitigation strategies to prevent the fault. In our work, we apply …
Nb₃Sn Coating Of A 2.6 Ghz Srf Cavity By Sputter Deposition Technique, M. S. Shakel, Wei Cao, H. Elsayed-Ali, G. V. Eremeev, U. Pudasaini, A. M. Valente-Feliciano
Nb₃Sn Coating Of A 2.6 Ghz Srf Cavity By Sputter Deposition Technique, M. S. Shakel, Wei Cao, H. Elsayed-Ali, G. V. Eremeev, U. Pudasaini, A. M. Valente-Feliciano
Electrical & Computer Engineering Faculty Publications
Nb₃Sn is of interest as a coating for SRF cavities due to its higher transition temperature Tc ~18.3 K and superheating field Hsh ~400 mT, both are twice that of Nb. Nb₃Sn coated cavities can achieve high-quality factors at 4 K and can replace the bulk Nb cavities operated at 2 K. A cylindrical magnetron sputtering system was built, commissioned, and used to deposit Nb₃Sn on the inner surface of a 2.6 GHz single-cell Nb cavity. With two identical cylindrical magnetrons, this system can coat a cavity with high symmetry and uniform thickness. Using Nb-Sn multilayer sequential sputtering followed by …
Cylindrical Magnetron Development For Nb₃Sn Deposition Via Magnetron Sputtering, Md. Nizam Sayeed, Hani Elsayed-Ali, C. Côté, M. A. Farzad, A. Sarkissian, G. V. Eremeev, A-M. Valente-Feliciano
Cylindrical Magnetron Development For Nb₃Sn Deposition Via Magnetron Sputtering, Md. Nizam Sayeed, Hani Elsayed-Ali, C. Côté, M. A. Farzad, A. Sarkissian, G. V. Eremeev, A-M. Valente-Feliciano
Electrical & Computer Engineering Faculty Publications
Due to its better superconducting properties (critical temperature Tc~ 18.3 K, superheating field Hsh~ 400 mT), Nb3Sn is considered as a potential alternative to niobium (Tc~ 9.25 K, Hsh~ 200 mT) for superconducting radiofrequency (SRF) cavities for particle acceleration. Magnetron sputtering is an effective method to produce superconducting Nb3Sn films. We deposited superconducting Nb3Sn films on samples with magnetron sputtering using co-sputtering, sequential sputtering, and sputtering from a stoichiometric target. Nb3Sn films produced by magnetron sputtering in our previous experiments have achieved DC superconducting critical temperature up to …
Using Ai For Management Of Field Emission In Srf Linacs, A. Carpenter, P. Degtiarenko, R. Suleiman, C. Tennant, D. Turner, L. S. Vidyaratne, Khan Iftekharuddin, Md. Monibor Rahman
Using Ai For Management Of Field Emission In Srf Linacs, A. Carpenter, P. Degtiarenko, R. Suleiman, C. Tennant, D. Turner, L. S. Vidyaratne, Khan Iftekharuddin, Md. Monibor Rahman
Electrical & Computer Engineering Faculty Publications
Field emission control, mitigation, and reduction is critical for reliable operation of high gradient superconducting radio-frequency (SRF) accelerators. With the SRF cavities at high gradients, the field emission of electrons from cavity walls can occur and will impact the operational gradient, radiological environment via activated components, and reliability of CEBAF’s two linacs. A new effort has started to minimize field emission in the CEBAF linacs by re-distributing cavity gradients. To measure radiation levels, newly designed neutron and gamma radiation dose rate monitors have been installed in both linacs. Artificial intelligence (AI) techniques will be used to identify cavities with high …
Initial Studies Of Cavity Fault Prediction At Jefferson Laboratory, L.S. Vidyaratne, A. Carpenter, R. Suleiman, C. Tennant, D. Turner, Khan Iftekharuddin, Md. Monibor Rahman
Initial Studies Of Cavity Fault Prediction At Jefferson Laboratory, L.S. Vidyaratne, A. Carpenter, R. Suleiman, C. Tennant, D. Turner, Khan Iftekharuddin, Md. Monibor Rahman
Electrical & Computer Engineering Faculty Publications
The Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Laboratory is a CW recirculating linac that utilizes over 400 superconducting radio-frequency (SRF) cavities to accelerate electrons up to 12 GeV through 5-passes. Recent work has shown that, given RF signals from a cavity during a fault as input, machine learning approaches can accurately classify the fault type. In this paper we report on initial results of predicting a fault onset using only data prior to the failure event. A data set was constructed using time-series data immediately before a fault (’unstable’) and 1.5 seconds prior to a fault (’stable’) gathered …
Charge Storage In Wo³ Polymorphs And Their Application As Supercapacitor Electrode Material, Vaibhav Lokhande, Abhishek Lokhande, Gon Namkoong, Jin Hyeok Kim, Taeksoo Ji
Charge Storage In Wo³ Polymorphs And Their Application As Supercapacitor Electrode Material, Vaibhav Lokhande, Abhishek Lokhande, Gon Namkoong, Jin Hyeok Kim, Taeksoo Ji
Electrical & Computer Engineering Faculty Publications
Tungsten oxide is a versatile material with different applications. It has many polymorphs with varying performance in energy storage application. We report simple and facile way to synthesize four phases of tungsten oxide from same precursor materials only by changing the pH and temperature values. Monoclinic, hexagonal, orthorhombic and tetragonal phase obtained, were analyzed and tested for supercapacitor application. The electrochemical analysis of four phases indicates that the hexagonal phase is best-suited electrode material for supercapacitor. The hexagonal phase exhibits higher specific capacitance (377.5 Fg-1 at 2 mVs-1), higher surface capacitive contribution (75%), better stability and rate …
Bandgap Profiling In Cigs Solar Cells Via Valence Electron Energy-Loss Spectroscopy, Julia I. Deitz, Shankar Karki, Sylvain X. Marsillac, Tyler J. Grassman
Bandgap Profiling In Cigs Solar Cells Via Valence Electron Energy-Loss Spectroscopy, Julia I. Deitz, Shankar Karki, Sylvain X. Marsillac, Tyler J. Grassman
Electrical & Computer Engineering Faculty Publications
A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn1-xGaxSe2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This method, which is particularly advantageous …
Real Time Spectroscopic Ellipsometry Analysis Of First Stage Cuin1-Xgaxse2 Growth: Indium-Gallium Selenide Co-Evaporation, Puja Pradhan, Puruswottam Aryal, Dinesh Attygalle, Abdel-Rahman Ibdah, Prakash Koirala, Jian Li, Khagendra P. Bhandari, Geethika K. Liyanage, Randy J. Ellingson, Michael J. Heben, Sylvain Marsillac, Robert W. Collins, Nikolas J. Podraza
Real Time Spectroscopic Ellipsometry Analysis Of First Stage Cuin1-Xgaxse2 Growth: Indium-Gallium Selenide Co-Evaporation, Puja Pradhan, Puruswottam Aryal, Dinesh Attygalle, Abdel-Rahman Ibdah, Prakash Koirala, Jian Li, Khagendra P. Bhandari, Geethika K. Liyanage, Randy J. Ellingson, Michael J. Heben, Sylvain Marsillac, Robert W. Collins, Nikolas J. Podraza
Electrical & Computer Engineering Faculty Publications
Real time spectroscopic ellipsometry (RTSE) has been applied for in-situ monitoring of the first stage of copper indium-gallium diselenide (CIGS) thin film deposition by the three-stage co-evaporation process used for fabrication of high efficiency thin film photovoltaic (PV) devices. The first stage entails the growth of indium-gallium selenide (In1-xGax)₂Se₃ (IGS) on a substrate of Mo-coated soda lime glass maintained at a temperature of 400 °C. This is a critical stage of CIGS deposition because a large fraction of the final film thickness is deposited, and as a result precise compositional control is desired in order to …
Magnetron Sputtering Of Nb3Sn For Srf Cavities, Md. N. Sayeed, H. Elsayed-Ali, G. V. Eremeev, M. J. Kelley, U. Pudasaini, C. E. Reece
Magnetron Sputtering Of Nb3Sn For Srf Cavities, Md. N. Sayeed, H. Elsayed-Ali, G. V. Eremeev, M. J. Kelley, U. Pudasaini, C. E. Reece
Electrical & Computer Engineering Faculty Publications
Nb3Sn is a potential candidate for surface material of SRF cavities since it can enable the cavity to operate at higher temperatures with high quality factor and at an increased accelerating gradient. Nb-Sn films were deposited using magnetron sputtering of individual Nb and Sn targets onto Nb and sapphire substrates. The as-deposited films were annealed at 1200 °C for 3 hours. The films were characterized for their structure by X-ray Diffraction (XRD), morphology by Field Emission Scanning Electron Microscopy (FESEM), and composition by Energy Dispersive X-ray Spectroscopy (EDS) and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS). The …
Characterization Of Laser-Generated Aluminum Plasma Using Ion Time-Of-Flight And Optical Emission Spectroscopy, Md. Haider A. Shaim, Hani E. Elsayed-Ali
Characterization Of Laser-Generated Aluminum Plasma Using Ion Time-Of-Flight And Optical Emission Spectroscopy, Md. Haider A. Shaim, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Laser plasma generated by ablation of an Al target in vacuum is characterized by ion time-of-flight combined with optical emission spectroscopy. A Q-switched Nd:YAG laser (wavelength λ = 1064 nm, pulse width τ ∼ 7 ns, and fluence F ≤ 38 J/cm2) is used to ablate the Al target. Ion yield and energy distribution of each charge state are measured. Ions are accelerated according to their charge state by the double-layer potential developed at the plasma-vacuum interface. The ion energy distribution follows a shifted Coulomb-Boltzmann distribution. Optical emission spectroscopy of the Al plasma gives significantly lower plasma temperature …
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Electrical & Computer Engineering Faculty Publications
Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) …
Perspective: The Physics, Diagnostics, And Applications Of Atmospheric Pressure Low Temperature Plasma Sources Used In Plasma Medicine, M. Laroussi
Electrical & Computer Engineering Faculty Publications
Low temperature plasmas have been used in various plasma processing applications for several decades. But it is only in the last thirty years or so that sources generating such plasmas at atmospheric pressure in reliable and stable ways have become more prevalent. First, in the late 1980s, the dielectric barrier discharge was used to generate relatively large volume diffuse plasmas at atmospheric pressure. Then, in the early 2000s, plasma jets that can launch cold plasma plumes in ambient air were developed. Extensive experimental and modeling work was carried out on both methods and much of the physics governing such sources …
Aluminum Multicharged Ion Generation From Femtosecond Laser Plasma, Md. Haider A. Shaim, Frederick Guy Wilson, Hani E. Elsayed-Ali
Aluminum Multicharged Ion Generation From Femtosecond Laser Plasma, Md. Haider A. Shaim, Frederick Guy Wilson, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Aluminum multicharged ion generation from femtosecond laser ablation is studied. A Ti:sapphire laser (wavelength 800 nm, pulse width ∼100 fs, and maximum laser fluence of 7.6 J/cm2) is used. Ion yield and energy distribution of each charge state are measured. A linear relationship between the ion charge state and the equivalent acceleration energy of the individual ion species is observed and is attributed to the presence of an electric field within the plasma-vacuum boundary that accelerates the ions. The ion energy distribution follows a shifted Coulomb-Boltzmann distribution. For Al1+ and Al2+, the ion energy distributions …
Rapid And Accurate C-V Measurements, Ji-Hong Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, David Nminibapiel, Joseph J. Kopanski
Rapid And Accurate C-V Measurements, Ji-Hong Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, David Nminibapiel, Joseph J. Kopanski
Electrical & Computer Engineering Faculty Publications
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100-MHz applied sine wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the MOS capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to nonideal behavior of real measurement systems. The key advance of this paper is to extract the system response function using the same measurement setup and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown …
A New Method For Grain Texture Manipulation In Post-Deposition Niobium Films, J. Musson, L. Phillips, K. Macha, H. Elsayed-Ali, W. Cao
A New Method For Grain Texture Manipulation In Post-Deposition Niobium Films, J. Musson, L. Phillips, K. Macha, H. Elsayed-Ali, W. Cao
Electrical & Computer Engineering Faculty Publications
Niobium films are frequently grown using forms of energetic condensation, with modest substrate temperatures to control grain structure. As an alternative, energetic deposition onto a cold substrate results in a dense amorphous film, with a much larger energy density than the re-crystallized state. Re-crystallization is then performed using a pulsed UV (HIPPO) laser, with minimal damage to the substrate. In addition, a graded interface between the substrate and Nb film is created during the early stages of energetic deposition. Experimental approach and apparatus are described.
Evaluation Of The Effects Of A Plasma Activated Medium On Cancer Cells, S. Mohades, M. Laroussi, J. Sears, N. Barekzi, H. Razavi
Evaluation Of The Effects Of A Plasma Activated Medium On Cancer Cells, S. Mohades, M. Laroussi, J. Sears, N. Barekzi, H. Razavi
Electrical & Computer Engineering Faculty Publications
The interaction of low temperature plasma with liquids is a relevant topic of study to the field of plasma medicine. This is because cells and tissues are normally surrounded or covered by biological fluids. Therefore, the chemistry induced by the plasma in the aqueous state becomes crucial and usually dictates the biological outcomes. This process became even more important after the discovery that plasma activated media can be useful in killing various cancer cell lines. Here, we report on the measurements of concentrations of hydrogen peroxide, a species known to have strong biological effects, produced by application of plasma to …
Temporary Bonding With Polydimethylglutarimide Based Lift Off Resist As A Layer Transfer Platform, T. Matsumae, A. D. Koehler, J. D. Greenlee, T. J. Anderson, H. Baumgart, G. G. Jernigan, K. D. Hobart, F. J. Kub
Temporary Bonding With Polydimethylglutarimide Based Lift Off Resist As A Layer Transfer Platform, T. Matsumae, A. D. Koehler, J. D. Greenlee, T. J. Anderson, H. Baumgart, G. G. Jernigan, K. D. Hobart, F. J. Kub
Electrical & Computer Engineering Faculty Publications
Bonding of lift off resist (LOR) was performed to realize temporary wafer bonding without residue. Bonding process conditions such as spin speed, pre-bake temperature, and bonding temperature were optimized to obtain a large bonded area with high bond strength. Under optimized process conditions, a bonded area covering over 98% of the wafer surface, with a room temperature bond strength of nearly 5 J/m2 is achieved. During razor blade testing, fracture often occurs at the Si wafer. Moreover, debonding using an N-Methyl-2-pyrrolidone (NMP)-based solvent left the wafer surface extremely small amount of residue. Thus, the optimized bonding processed developed in …
Plasma Processes And Polymers Special Issue On: Plasma And Cancer, Mounir Laroussi, Michael Keidar
Plasma Processes And Polymers Special Issue On: Plasma And Cancer, Mounir Laroussi, Michael Keidar
Electrical & Computer Engineering Faculty Publications
During the last two decades, research efforts on the application of low temperature plasmas in biology and medicine have positioned nonequilibrium lowtemperature plasmas as a technology that has the potential of revolutionizing healthcare.[1,2] Low temperature plasmas can be applied in direct contact with living tissues to inactivate bacteria,[3] to disinfect wounds and accelerate wound healing,[4] and to induce damage in some cancer cells.[5–11]
Analysis Of Interband, Intraband, And Plasmon Polariton Transitions In Silver Nanoparticle Films Via In Situ Real-Time Spectroscopic Ellipsometry, S. A. Little, R. W. Collins, S. Marsillac
Analysis Of Interband, Intraband, And Plasmon Polariton Transitions In Silver Nanoparticle Films Via In Situ Real-Time Spectroscopic Ellipsometry, S. A. Little, R. W. Collins, S. Marsillac
Electrical & Computer Engineering Faculty Publications
The dielectric function of Ag nanoparticle films, deduced from an analysis of in situ real-time spectroscopic ellipsometry (RTSE) measurements, is found to evolve with time during deposition in close consistency with the film structure, deduced in the same RTSE analysis. In the nucleation regime, the intraband dielectric function component is absent and plasmon polariton behavior dominates. Only at nuclei contact, does the intraband amplitude appear, increasing above zero. Both intraband and plasmon amplitudes coexist during surface smoothening associated with coalescence. The intraband relaxation time increases rapidly after surface smoothening is complete, also in consistency with the thin film structural evolution.
Ignition Of A Large Volume Plasma With A Plasma Jet, M. Laroussi, M. A. Akman
Ignition Of A Large Volume Plasma With A Plasma Jet, M. Laroussi, M. A. Akman
Electrical & Computer Engineering Faculty Publications
Here we report on a method to generate a long plasma plume and to ignite a large volume plasma by means of the jet. The plasma plume is generated by our tube reactor and then introduced into a chamber where the pressure is controlled. We discovered there are three operating phases:Aphasewhere the plume length remains approximately constant, followed by a second phase where the jet increases in length as the pressure decreases. Then at pressures below 70 Torr a mode transition occurs where the plume length decreases and the plasma expands until the entire chamber is filled.
Pulsed Laser Deposition Of Graphite Counter Electrodes For Dye-Sensitized Solar Cells, Krishna P. Acharya, Himal Khatri, Sylvain Marsillac, Bruno Ullrich, Pavel Anzenbacher, Mikhail Zamkov
Pulsed Laser Deposition Of Graphite Counter Electrodes For Dye-Sensitized Solar Cells, Krishna P. Acharya, Himal Khatri, Sylvain Marsillac, Bruno Ullrich, Pavel Anzenbacher, Mikhail Zamkov
Electrical & Computer Engineering Faculty Publications
We report on pulsed laser deposition of graphite onto flexible plastic and conductive glass substrates for use as a counter electrode in dye-sensitized solar cells. The efficiency of as-prepared graphite electrodes was tested using CdS-sensitized solar cell architecture resulting in external quantum efficiency comparable to that of conventional platinum counter electrodes. This work highlights the possibility of using pulsed laser deposited graphite as a low-cost alternative to platinum, which could be fabricated both on flexible and rigid substrates.
Finite Element Analysis Of Ring-Shaped Emission Profile In Plasma Bullet, Yukinori Sakiyama, David B. Graves, Julien Jarrige, Mounir Laroussi
Finite Element Analysis Of Ring-Shaped Emission Profile In Plasma Bullet, Yukinori Sakiyama, David B. Graves, Julien Jarrige, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
Using a one-way coupled model of neutral gas flow and plasma dynamics we report a mechanism to explain the ring-shaped emission pattern that has been observed experimentally in plasma bullets at atmospheric pressure. We solve a fluid model with the local field approximation in one-dimensional cylindrical coordinates, corresponding to a cross-section of a plasma bullet. Pulselike uniform electric field is assumed to be applied perpendicular to the simulation domain. Time and spatially resolved spectroscopic measurements support the simulation results.
Comment On "Superfluid Turbulence From Quantum Kelvin Wave To Classical Kolmogorov Cascades", Jeffrey Yepez, George Vahala, Linda L. Vahala, Min Soe
Comment On "Superfluid Turbulence From Quantum Kelvin Wave To Classical Kolmogorov Cascades", Jeffrey Yepez, George Vahala, Linda L. Vahala, Min Soe
Electrical & Computer Engineering Faculty Publications
No abstract provided.
Coupled Ray-Tracing And Fokker-Planck Ebw Modeling For Spherical Tokamaks, Jakub Urban, Joan Decker, Y. Peysson, Josef Preinhaelter, Gary Taylor, Linda L. Vahala, George Vahala
Coupled Ray-Tracing And Fokker-Planck Ebw Modeling For Spherical Tokamaks, Jakub Urban, Joan Decker, Y. Peysson, Josef Preinhaelter, Gary Taylor, Linda L. Vahala, George Vahala
Electrical & Computer Engineering Faculty Publications
The AMR (Antenna—Mode-conversion—Ray-tracing) code [1, 2] has been recently coupled with the LUKE [3] Fokker-Planck code. This modeling suite is capable of complex simulations of electron Bernstein wave (EBW) emission, heating and current drive. We employ these codes to study EBW heating and current drive performance under spherical tokamak (ST) configurations—typical NSTX discharges are employed. EBW parameters, such as frequency, antenna position and direction, are varied and optimized for particular configurations and objectives. In this way, we show the versatility of EBWs.
Dynamics Of An Atmospheric Pressure Plasma Plume Generated By Submicrosecond Voltage Pulses, Xinpei Lu, Mounir Laroussi
Dynamics Of An Atmospheric Pressure Plasma Plume Generated By Submicrosecond Voltage Pulses, Xinpei Lu, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
Nonequilibrium plasmas driven by submicrosecond high voltage pulses have been proven to produce high-energy electrons, which in turn lead to enhanced ionization and excitations. Here, we describe a device capable of launching a cold plasma plume in the surrounding air. This device, "the plasma pencil," is driven by few hundred nanosecond wide pulses at repetition rates of a few kilohertz. Correlation between current-voltage characteristics and fast photography shows that the plasma plume is in fact a small bulletlike volume of plasma traveling at unusually high velocities. A model based on photoionization is used to explain the propagation kinetics of the …
Optimization Of Ultraviolet Emission And Chemical Species Generation From A Pulsed Dielectric Barrier Discharge At Atmospheric Pressure, Xinpei Lu, Mounir Laroussi
Optimization Of Ultraviolet Emission And Chemical Species Generation From A Pulsed Dielectric Barrier Discharge At Atmospheric Pressure, Xinpei Lu, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
One of the attractive features of nonthermal atmospheric pressure plasmas is the ability to achieve enhanced gas phase chemistry without the need for elevated gas temperatures. This attractive characteristic recently led to their extensive use in applications that require low temperatures, such as material processing and biomedical applications. The agents responsible for the efficient plasma reactivity are the ultraviolet (UV) photons and the chemically reactive species. In this paper, in order to optimize the UV radiation and reactive species generation efficiency, the plasma was generated by a dielectric barrier discharge driven by unipolar submicrosecond square pulses. To keep the discharge …
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Electrical & Computer Engineering Faculty Publications
γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the preparation process allows us to stabilize the phase κ at …