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Full-Text Articles in Physics
Real Time Spectroscopic Ellipsometry Analysis Of First Stage Cuin1-Xgaxse2 Growth: Indium-Gallium Selenide Co-Evaporation, Puja Pradhan, Puruswottam Aryal, Dinesh Attygalle, Abdel-Rahman Ibdah, Prakash Koirala, Jian Li, Khagendra P. Bhandari, Geethika K. Liyanage, Randy J. Ellingson, Michael J. Heben, Sylvain Marsillac, Robert W. Collins, Nikolas J. Podraza
Real Time Spectroscopic Ellipsometry Analysis Of First Stage Cuin1-Xgaxse2 Growth: Indium-Gallium Selenide Co-Evaporation, Puja Pradhan, Puruswottam Aryal, Dinesh Attygalle, Abdel-Rahman Ibdah, Prakash Koirala, Jian Li, Khagendra P. Bhandari, Geethika K. Liyanage, Randy J. Ellingson, Michael J. Heben, Sylvain Marsillac, Robert W. Collins, Nikolas J. Podraza
Electrical & Computer Engineering Faculty Publications
Real time spectroscopic ellipsometry (RTSE) has been applied for in-situ monitoring of the first stage of copper indium-gallium diselenide (CIGS) thin film deposition by the three-stage co-evaporation process used for fabrication of high efficiency thin film photovoltaic (PV) devices. The first stage entails the growth of indium-gallium selenide (In1-xGax)₂Se₃ (IGS) on a substrate of Mo-coated soda lime glass maintained at a temperature of 400 °C. This is a critical stage of CIGS deposition because a large fraction of the final film thickness is deposited, and as a result precise compositional control is desired in order to …
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …