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Full-Text Articles in Physics
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
When doped with copper ions, lithium borate materials are candidates for use in radiation dosimeters. Copper-doped lithium tetraborate (Li2B4O7) crystals have been widely studied, but little is known thus far about copper ions in lithium triborate (LiB3O5) crystals. In the present investigation, Cu+ ions (3d10) were diffused into an undoped LiB3O5 crystal at high temperature. These ions occupy both Li+ and interstitial positions in the crystal. A photoluminescence (PL) band peaking near 387 nm and a photoluminescence excitation (PLE) band peaking near 273 nm verify that a portion of these Cu+ ions are located at regular Li+ sites. After an …
A Transfer Matrix Approach To Aid In The Design And Optimization Of Hybrid Advanced Passive Structures For Enhancing Photovoltaic Efficiency, James Walshe, Sarah Mccormack, Hind Ahmed, John Doran
A Transfer Matrix Approach To Aid In The Design And Optimization Of Hybrid Advanced Passive Structures For Enhancing Photovoltaic Efficiency, James Walshe, Sarah Mccormack, Hind Ahmed, John Doran
Conference Papers
The addition of a luminescent down-shifting (LDS) layer directly onto a photovoltaic (PV) cell introduces additional loss mechanisms within the system. The combination of non-ideal photo-luminescent materials encapsulated within a limited range of viable host materials, with the increased reflection losses arising from the newly created interface represent losses which must be overcome for LDS to offer an enhancement to the underlying cells efficiency. Exploiting the interaction between the highly enhanced electric fields established close to a metal nanoparticles (MNP’s) surface is one route aimed at mitigating the poor optical properties of the luminophore-host combinations available. Alternative approaches, aimed at …
Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications
Epitaxial Ge1-ySny (y = 0%–7.5%) alloys grown on either Si or Ge-buffered Si substrates by chemical vapor deposition were studied as a function of Sn content using temperature-dependent photoluminescence (PL). PL emission peaks from both the direct bandgap (Γ-valley) and the indirect bandgap (L-valley) to the valence band (denoted by ED and EID, respectively) were clearly observed at 125 and 175 K for most Ge1-ySny samples studied. At 300 K, however, all of the samples exhibited dominant ED emission with either very weak or no measureable EID emission. At 10 K, …