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Old Dominion University

Electrical & Computer Engineering Faculty Publications

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Magnetron sputtering

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Cylindrical Magnetron Development For Nb₃Sn Deposition Via Magnetron Sputtering, Md. Nizam Sayeed, Hani Elsayed-Ali, C. Côté, M. A. Farzad, A. Sarkissian, G. V. Eremeev, A-M. Valente-Feliciano Jan 2021

Cylindrical Magnetron Development For Nb₃Sn Deposition Via Magnetron Sputtering, Md. Nizam Sayeed, Hani Elsayed-Ali, C. Côté, M. A. Farzad, A. Sarkissian, G. V. Eremeev, A-M. Valente-Feliciano

Electrical & Computer Engineering Faculty Publications

Due to its better superconducting properties (critical temperature Tc~ 18.3 K, superheating field Hsh~ 400 mT), Nb3Sn is considered as a potential alternative to niobium (Tc~ 9.25 K, Hsh~ 200 mT) for superconducting radiofrequency (SRF) cavities for particle acceleration. Magnetron sputtering is an effective method to produce superconducting Nb3Sn films. We deposited superconducting Nb3Sn films on samples with magnetron sputtering using co-sputtering, sequential sputtering, and sputtering from a stoichiometric target. Nb3Sn films produced by magnetron sputtering in our previous experiments have achieved DC superconducting critical temperature up to …


Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza Aug 2017

Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza

Electrical & Computer Engineering Faculty Publications

Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) …