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Full-Text Articles in Physics

Scaling Properties At Freeze-Out In Relativistic Heavy-Ion Collisions, M. M. Aggarwal, Z. Ahammed, A. V. Alakhverdyants, I. Alekseev, J. Alford, B. D. Anderson, S. Bueltmann, I. Koralt, D. Plyku, Star Collaboration Jan 2011

Scaling Properties At Freeze-Out In Relativistic Heavy-Ion Collisions, M. M. Aggarwal, Z. Ahammed, A. V. Alakhverdyants, I. Alekseev, J. Alford, B. D. Anderson, S. Bueltmann, I. Koralt, D. Plyku, Star Collaboration

Physics Faculty Publications

Identified charged pion, kaon, and proton spectra are used to explore the system size dependence of bulk freeze-out properties in Cu+Cu collisions at √sNN=200 and 62.4 GeV. The data are studied with hydrodynamically motivated blast-wave and statistical model frameworks in order to characterize the freeze-out properties of the system. The dependence of freeze-out parameters on beam energy and collision centrality is discussed. Using the existing results from Au + Au and pp collisions, the dependence of freeze-out parameters on the system size is also explored. This multidimensional systematic study furthers our understanding of the QCD phase diagram revealing the importance …


Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali Jan 2011

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …