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Full-Text Articles in Physics

Atmospheric Pressure Chemical Vapor Deposition Of Functional Oxide Materials For Crystalline Silicon Solar Cells, Kristopher Davis Jan 2015

Atmospheric Pressure Chemical Vapor Deposition Of Functional Oxide Materials For Crystalline Silicon Solar Cells, Kristopher Davis

Electronic Theses and Dissertations

Functional oxides are versatile materials that can simultaneously enable efficiency gains and cost reductions in crystalline silicon (c-Si) solar cells. In this work, the deposition of functional oxide materials using atmospheric pressure chemical vapor deposition (APCVD) and the integration of these materials into c-Si solar cells are explored. Specifically, thin oxide films and multi-layer film stacks are utilized for the following purposes: (1) to minimize front surface reflectance without increasing parasitic absorption within the anti-reflection coating(s); (2) to maximize internal back reflectance of rear passivated cells, thereby increasing optical absorption of weakly absorbed long wavelength photons (? > 900 nm); (3) …


Plasmonic Nanostructures For The Absorption Enhancement Of Silicon Solar Cells, Nathan Matthias Burford May 2013

Plasmonic Nanostructures For The Absorption Enhancement Of Silicon Solar Cells, Nathan Matthias Burford

Graduate Theses and Dissertations

In this work, computational investigation of plasmonic nanostructures was conducted using the commercial finite element electromagnetics solver Ansys® HFSS. Arrays of silver toroid nanoparticles located on the surface of an amorphous silicon thin-film absorbing layer were studied for particle sizes ranging from 20 nm to 200 nm in outer diameter. Parametric optimization by calculating an approximation of the photocurrent enhancement due to the nanoparticles was performed to determine optimal surface coverage of the nanoparticles. A comparison was made between these optimized nanotoroid arrays and optimized nanosphere arrays based on spectral absorption enhancement and potential photocurrent enhancement in an amorphous silicon …


Plasmonic And Photonic Designs For Light Trapping In Thin Film Solar Cells, Liming Ji Dec 2012

Plasmonic And Photonic Designs For Light Trapping In Thin Film Solar Cells, Liming Ji

Graduate Theses and Dissertations

Thin film solar cells are promising to realize cheap solar energy. Compared to conventional wafer cells, they can reduce the use of semiconductor material by 90%. The efficiency of thin film solar cells, however, is limited due to insufficient light absorption. Sufficient light absorption at the bandgap of semiconductor requires a light path more than 10x the thickness of the semiconductor. Advanced designs for light trapping are necessary for solar cells to absorb sufficient light within a limited volume of semiconductor. The goal is to convert the incident light into a trapped mode in the semiconductor layer.

In this dissertation, …


Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff Nov 2011

Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff

Physics - All Scholarship

We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n2+/h (n – film refractive index, λ – optical wavelength, h …


Effect Of Ga Content On Defect States In Cuin1-XGaXSe2 Photovoltaic Devices, Jennifer T. Heath, J. David Cohen, William N. Shafarman, Dongxiang Liao, Angus Rockett Jan 2002

Effect Of Ga Content On Defect States In Cuin1-XGaXSe2 Photovoltaic Devices, Jennifer T. Heath, J. David Cohen, William N. Shafarman, Dongxiang Liao, Angus Rockett

Faculty Publications

Defects in the band gap of CuIn1-xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.