Physics Commons^™

Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri

Legacy Theses & Dissertations (2009 - 2024)

The scalability of field effect transistor has led to the monumental success of complementary metal-oxide-semiconductor (CMOS) technology. In the past, device scaling was not the major issue to a greater extent. Recently with current technology nodes, transistor characteristics show signs of reduced performance due to short channel effects and other issues related to device scaling. Device designers look for innovative ways to enhance the transistor performance while keeping up with device miniaturization. Successful inventions include the development of tri-gate technology, gate all around (GAA) field effect transistors, silicon-on-insulator substrate, and high-k dielectrics. These developments have enabled the device scaling that …