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Advanced Iii-V / Si Nano-Scale Transistors And Contacts: Modeling And Analysis, Seung Hyun Park

Open Access Dissertations

The exponential miniaturization of Si CMOS technology has been a key to the electronics revolution. However, the continuous downscaling of the gate length becomes the biggest challenge to maintain higher speed, lower power, and better electrostatic integrity for each following generation. Hence, novel devices and better channel materials than Si are considered to improve the metal-oxide-semiconductor field-effect transistors (MOSFETs) device performance. III-V compound semiconductors and multi-gate structures are being considered as promising candidates in the next CMOS technology. III-V and Si nano-scale transistors in different architectures are investigated (1) to compare the performance between InGaAs of III-V compound semiconductors and …