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Articles 1 - 2 of 2
Full-Text Articles in Physics
Development Of Iii-Sb Based Technologies For P-Channel Mosfet In Cmos Applications, Shailesh Kumar Madisetti
Development Of Iii-Sb Based Technologies For P-Channel Mosfet In Cmos Applications, Shailesh Kumar Madisetti
Legacy Theses & Dissertations (2009 - 2024)
The continuous scaling of silicon CMOS predicts the end of roadmap due to the difficulties such as that arise from electrostatic integrity, design complexities, and power dissipation. These fundamental and practical limitations bring the need for innovative design architectures or alternate materials with higher carrier transport than current Si based materials. New device designs such as multigate/gate-all-around architectures improve electrostatics while alternate materials like III-Vs such as III-As for electrons and III-Sbs for holes increase operational speed, lower power dissipation and thereby improve performance of the transistors due to their low effective mass and faster transport properties. Further, application of …
Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri
Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri
Legacy Theses & Dissertations (2009 - 2024)
The scalability of field effect transistor has led to the monumental success of complementary metal-oxide-semiconductor (CMOS) technology. In the past, device scaling was not the major issue to a greater extent. Recently with current technology nodes, transistor characteristics show signs of reduced performance due to short channel effects and other issues related to device scaling. Device designers look for innovative ways to enhance the transistor performance while keeping up with device miniaturization. Successful inventions include the development of tri-gate technology, gate all around (GAA) field effect transistors, silicon-on-insulator substrate, and high-k dielectrics. These developments have enabled the device scaling that …