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- Engineering, Electrical Engineering (4)
- Phonons (3)
- Doping (2)
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- Absorption spectra (1)
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- Dielectric relaxation (1)
- Dielectric response (1)
- Doping dependence (1)
- Down-conversion (1)
- Electric measurements (1)
- Electrical Engineering, Nanoscience, Nanotechnology, Optics (1)
- Electrical resistivity (1)
- Electron mobility (1)
- Electronic properties (1)
- Engineering, Electrical Engineering, Optics (1)
- Engineering, Electrical Engineering, Physics (1)
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- First principles (1)
- Heterojunctions (1)
Articles 1 - 9 of 9
Full-Text Articles in Physics
Effect Of Z1/2, Eh5, And Ci1 Deep Defects On The Performance Of N-Type 4h-Sic Epitaxial Layers Schottky Detectors: Alpha Spectroscopy And Deep Level Transient Spectroscopy Studies, M. A. Mannan, S. K. Chaudhuri, K. V. Nguyen, K. C. Mandal
Effect Of Z1/2, Eh5, And Ci1 Deep Defects On The Performance Of N-Type 4h-Sic Epitaxial Layers Schottky Detectors: Alpha Spectroscopy And Deep Level Transient Spectroscopy Studies, M. A. Mannan, S. K. Chaudhuri, K. V. Nguyen, K. C. Mandal
Faculty Publications
No abstract provided.
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Faculty Publications
No abstract provided.
Experimental Determination Of Electron-Hole Pair Creation Energy In 4h-Sic Epitaxial Layer: An Absolute Calibration Approach, S. K. Chaudhuri, K. J. Zavalla, K. C. Mandal
Experimental Determination Of Electron-Hole Pair Creation Energy In 4h-Sic Epitaxial Layer: An Absolute Calibration Approach, S. K. Chaudhuri, K. J. Zavalla, K. C. Mandal
Faculty Publications
No abstract provided.
Doping Dependence Of Electronic And Mechanical Properties Of Gase1−XTeX And Ga1−XInXSe From First Principles, Zs. Rak, S. D. Mahanti, K. C. Mandal, N. C. Fernelius
Doping Dependence Of Electronic And Mechanical Properties Of Gase1−XTeX And Ga1−XInXSe From First Principles, Zs. Rak, S. D. Mahanti, K. C. Mandal, N. C. Fernelius
Faculty Publications
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Faculty Publications
No abstract provided.
Erratum: “Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal” [Appl. Phys. Lett.87, 182104 (2005)], B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Erratum: “Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal” [Appl. Phys. Lett.87, 182104 (2005)], B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Faculty Publications
No abstract provided.
Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal, B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal, B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Faculty Publications
No abstract provided.
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Faculty Publications
No abstract provided.
Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal
Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal
Faculty Publications
No abstract provided.