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Full-Text Articles in Physics
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Theses and Dissertations
This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …
Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily
Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily
Electrical & Computer Engineering Theses & Dissertations
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an …
Effect Of Germanium Doping On Erbium Sensitization In The Erbium Doped Silicon Rich Silica Material System, Forrest Ruhge
Effect Of Germanium Doping On Erbium Sensitization In The Erbium Doped Silicon Rich Silica Material System, Forrest Ruhge
Electronic Theses and Dissertations
The continued size reduction in electronic integrated circuits has lead to a demand for on-chip high-bandwidth and low loss communication channels. Optical interconnects are considered an essential addition to the silicon electronics platform. A major challenge in the field of integrated Si photonics is the development of cost effective silicon compatible light sources. This thesis investigates the sensitization of group IV doped silica films emitting at 1.535μm for applications as silicon compatible light sources. Thin erbium-doped silica films containing excess silicon and germanium were deposited using a multi-gun sputter system. The composition of the deposited materials was verified by Rutherford …
An Erasable Optical Memory Based On Stimulated Electronic Transition Concept, James D. Satira
An Erasable Optical Memory Based On Stimulated Electronic Transition Concept, James D. Satira
Electrical & Computer Engineering Theses & Dissertations
Erasable optical memory systems with a high storage density and a large data transfer rate are required for many real time data acquisition systems such as those placed aboard NASA's space born platforms. A new concept for erasable optical memory involving stimulated electronic transitions (SET) will meet these requirements. The SET concept useful in erasable optical storage systems was demonstrated in MgS and SrS doped with Eu and Sm. The optical properties of these materials were studied. The reading and writing wavelengths for these samples were determined to be 950 and 514 nm respectively. The peaks of the emission spectra …