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Full-Text Articles in Physics
Gold/Qds-Embedded-Ceria Nanoparticles: Optical Fluorescence Enhancement As A Quenching Sensor, Nader Shehata, Effat Samir, Ishac Kandas
Gold/Qds-Embedded-Ceria Nanoparticles: Optical Fluorescence Enhancement As A Quenching Sensor, Nader Shehata, Effat Samir, Ishac Kandas
Electrical & Computer Engineering Faculty Publications
This work focuses on improving the fluorescence intensity of cerium oxide (ceria) nanoparticles (NPs) through added plasmonic nanostructures. Ceria nanoparticles are fluorescent nanostructures which can emit visible fluorescence emissions under violet excitation. Here, we investigated different added plasmonic nanostructures, such as gold nanoparticles (Au NPs) and Cadmium sulfide/selenide quantum dots (CdS/CdSe QDs), to check the enhancement of fluorescence intensity emissions caused by ceria NPs. Different plasmonic resonances of both aforementioned nanostructures have been selected to develop optical coupling with both fluorescence excitation and emission wavelengths of ceria. In addition, different additions whether in-situ or post-synthesis have been investigated. We found …
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …