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Full-Text Articles in Physics
Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Theses and Dissertations
Microscale beams of germanium ions were used to target different locations of aluminum galliumnitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) to determine location dependent radiation effects. 1.7 MeV Ge ions were targeted at the gap between the gate and the drain to observe displacement damage effects while 47 MeV Ge ions were targeted at the gate to observe ionization damage effects. Electrical data was taken pre, during, and post irradiation. To separate transient from permanent degradation, the devices were characterized after a room temperature anneal for at least 30 days. Optical images were also analyzed pre and post irradiation. …
The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves
The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves
Theses and Dissertations
Ge1-xSnx alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge1-xSnx thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in …