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Articles 1 - 5 of 5
Full-Text Articles in Physics
Plasma Processes And Cancer - Special Topical Cluster Of The 2nd Iwpct Meeting, Masaru Hori, Mounir Laroussi, Kai Masur, Yuzuru Ikehara
Plasma Processes And Cancer - Special Topical Cluster Of The 2nd Iwpct Meeting, Masaru Hori, Mounir Laroussi, Kai Masur, Yuzuru Ikehara
Electrical & Computer Engineering Faculty Publications
(First paragraph) Although the emerging multidisciplinary field of plasma medicine has been around for nearly two decades important advances have already taken place that could one day revolutionize healthcare and the way various challenging diseases can be treated.1-3Amongst these advances the effects of low temperature plasma (LTP) on cancer cells in vitro and in vivo stand out.4-13Current cancer treatment modalities, such as chemotherapy and radiation therapy, have serious side effects and tend to lose their benefits to the patients after a while. Therefore, novel and improved therapies that can be used alone …
Evaluation Of The Effects Of A Plasma Activated Medium On Cancer Cells, S. Mohades, M. Laroussi, J. Sears, N. Barekzi, H. Razavi
Evaluation Of The Effects Of A Plasma Activated Medium On Cancer Cells, S. Mohades, M. Laroussi, J. Sears, N. Barekzi, H. Razavi
Electrical & Computer Engineering Faculty Publications
The interaction of low temperature plasma with liquids is a relevant topic of study to the field of plasma medicine. This is because cells and tissues are normally surrounded or covered by biological fluids. Therefore, the chemistry induced by the plasma in the aqueous state becomes crucial and usually dictates the biological outcomes. This process became even more important after the discovery that plasma activated media can be useful in killing various cancer cell lines. Here, we report on the measurements of concentrations of hydrogen peroxide, a species known to have strong biological effects, produced by application of plasma to …
Simulation Study Of Hemt Structures With Hfo2 Cap Layer For Mitigating Inverse Piezoelectric Effect Related Device Failures, Deepthi Nagulapally, Ravi P. Joshi, Aswini Pradhan
Simulation Study Of Hemt Structures With Hfo2 Cap Layer For Mitigating Inverse Piezoelectric Effect Related Device Failures, Deepthi Nagulapally, Ravi P. Joshi, Aswini Pradhan
Electrical & Computer Engineering Faculty Publications
The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 "cap layer" above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using "field plates" in concert with high-k oxides
Spark Discharge Coupled Laser Multicharged Ion Source, Md. Haider A. Shaim, Hani E. Elsayed-Ali
Spark Discharge Coupled Laser Multicharged Ion Source, Md. Haider A. Shaim, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
A spark discharge is coupled to a laser multicharged ion source to enhance ion generation. The laser plasma triggers a spark discharge with electrodes located in front of the ablated target. For an aluminum target, the spark discharge results in significant enhancement in the generation of multicharged ions along with higher charge states than observed with the laser source alone. When a Nd:YAG laser pulse (wavelength 1064 nm, pulse width 7.4 ns, pulse energy 72 mJ, laser spot area on target 0.0024 cm2) is used, the total multicharged ions detected by a Faraday cup is 1.0 nC with …
Temporary Bonding With Polydimethylglutarimide Based Lift Off Resist As A Layer Transfer Platform, T. Matsumae, A. D. Koehler, J. D. Greenlee, T. J. Anderson, H. Baumgart, G. G. Jernigan, K. D. Hobart, F. J. Kub
Temporary Bonding With Polydimethylglutarimide Based Lift Off Resist As A Layer Transfer Platform, T. Matsumae, A. D. Koehler, J. D. Greenlee, T. J. Anderson, H. Baumgart, G. G. Jernigan, K. D. Hobart, F. J. Kub
Electrical & Computer Engineering Faculty Publications
Bonding of lift off resist (LOR) was performed to realize temporary wafer bonding without residue. Bonding process conditions such as spin speed, pre-bake temperature, and bonding temperature were optimized to obtain a large bonded area with high bond strength. Under optimized process conditions, a bonded area covering over 98% of the wafer surface, with a room temperature bond strength of nearly 5 J/m2 is achieved. During razor blade testing, fracture often occurs at the Si wafer. Moreover, debonding using an N-Methyl-2-pyrrolidone (NMP)-based solvent left the wafer surface extremely small amount of residue. Thus, the optimized bonding processed developed in …