Physics Commons^™

Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam

Electronic Thesis and Dissertation Repository

The advancement of semiconductor materials has played a crucial role in driving positive technological breakthroughs that impact humanity in numerous ways. The presence of defects significantly alters the physical properties of semiconductors, making their analysis essential in the fabrication of semiconductor devices. I presented a new method to quantify surface and near-surface defects in single crystal semiconductors. Epitaxially-grown silicon was measured by low energy electron diffraction (LEED) to obtain the surface Debye temperature (θ_D). The results showed the surface θ_D of bulk Si (001), 1.0 μm, and 0.6 μm Si on sapphire of 333 K, 299 K, …

Perspectives On Determinism In Quantum Mechanics: Born, Bohm, And The “Quantal Newtonian” Laws, Viraht Sahni

Publications and Research

Quantum mechanics has a deterministic Schrödinger equation for the wave function. The Göttingen–Copenhagen statistical interpretation is based on the Born Rule that interprets the wave function as a “probability amplitude.” A precept of this interpretation is the lack of determinism in quantum mechanics. The Bohm interpretation is that the wave function is a source of a field experienced by the electrons, thereby attributing determinism to quantum theory. In this paper, we present a new perspective on such determinism. The ideas are based on the equations of motion or “Quantal Newtonian” Laws obeyed by each electron. These Laws, derived from …

Perspectives On Determinism In Quantum Mechanics: Born, Bohm, And The 'Quantal Newtonian' Laws, Viraht Sahni

Publications and Research

Quantum mechanics has a deterministic Schrödinger equation for the wave function. The Göttingen-Copenhagen statistical interpretation is based on the Born Rule that interprets the wave function as a ‘probability amplitude’. A precept of this interpretation is the lack of determinism in quantum mechanics. The Bohm interpretation is that the wave function is a source of a field experienced by the electrons, thereby attributing determinism to quantum theory. In this paper we present a new perspective on such determinism. The ideas are based on the equations of motion or ‘Quantal Newtonian’ Laws obeyed by each electron. These Laws, derived from the …

Dreams Of Molecular Beams: Indium Gallium Arsenide Tensile-Strained Quantum Dots And Advances Towards Dynamic Quantum Dots (Moleculare Radiorum Somnia: Indii Gallii Arsenicus Tensa Quanta Puncta Et Ad Dinamicae Quantae Puntae Progressus), Kevin Daniel Vallejo

Boise State University Theses and Dissertations

Through the operation of a molecular beam epitaxy (MBE) machine, I worked on developing the homoepitaxy of high quality InAs with a (111)A crystallographic orientation. By tuning substrate temperature, we obtained a transition from a 2D island growth mode to step- ow growth. Optimized MBE parameters (substrate temperature = 500 °C, growth rate = 0.12 ML/s and V/III ratio ⩾ 40) lead to growth of extremely smooth InAs(111)A films, free from hillocks and other 3D surface imperfections. We see a correlation between InAs surface smoothness and optical quality, as measured by photoluminescence spectroscopy. This work establishes InAs(111)A as a platform …

Functional Nanoparticles: Tin Monoxide And Molybdenum Disulfide Quantum Dots On Graphene Nanosheets, Denys Vidish

Electronic Thesis and Dissertation Repository

Light harvesting can be referred to the use of an ensemble of different nanoparticles, or quantum dots, or other absorbers to optimize the ability to capture a given spectrum of electromagnetic radiation (for example the solar spectrum under specific atmospheric conditions) in a light-absorbing system. To this end, different nanoparticles play complementary functions within the system and absorb or scatter light at different wavelength intervals. Light harvesting finds applications in fields as diverse as solar cells, photosynthesis and photocatalysis. Graphene supporting a set of different semiconducting nanoparticles has often been proposed as light harvesters. To further this concept, my thesis …

Fundamental Transport Properties In Silicon Quantum Structures, Nazban M. Darukhanawalla

Electronic Thesis and Dissertation Repository

In the field of silicon photonics, there is an effort to bridge the gap between electrical and optical signals on a single platform, creating a need for Si-based light sources. In this project, Si quantum structures – Si quantum wells and quantum dots in SiO2 were fabricated via solid state precipitation methods. Their properties were studied using X-ray photoelectron spectroscopy, photoluminescence and I-V measurements. Rutherford backscattering spectroscopy was used for depth analysis in monitoring the Si distribution. Different electrical transport mechanisms were explored to understand how an ensemble of silicon QD’s or a silicon quantum well behaves in an SiO2 …

Understanding The Magnetic Properties Of Ii-Vi Semiconductor Nanocrystals, Alex Khammang

Electronic Theses and Dissertations

Semiconductor nanocrystals (NC) are well known for their unique size tunable optical properties making them suitable candidates for devices such as light emitting diodes (LEDs), solar cells, and cellular labels. II-VI semiconductors in the bulk form behave diamagnetically, but can inherit paramagnetic (PM) or ferromagnetic (FM) properties at the nanoscale. Reports suggest that the emergence of weak PM or FM behavior in undoped NCs are attributed to the increased surface to volume ratio compared for NCs. Traditionally, these NCs only obtain magnetic properties after doping with certain transition metals, such as Co, Mn, or Fe. Many mechanisms have been proposed …

Study Of The Kinetic Energy Densities Of Electrons As Applied To Quantum Dots In A Magnetic Field, Marlina Slamet, Viraht Sahni

Publications and Research

There are three expressions for the kinetic energy density t(r) expressed in terms of its quantal source, the single‐particle density matrix: t_A(r), the integrand of the kinetic energy expectation value; t_B(r), the trace of the kinetic energy tensor; t_C(r), a virial form in terms of the 'classical' kinetic field. These kinetic energy densities are studied by application to 'artificial atoms' or quantum dots in a magnetic field in a ground and excited singlet state. A comparison with the densities for natural atoms and molecules in their ground state is made. The near nucleus …

Kinetic Effects In 2d And 3d Quantum Dots: Comparison Between High And Low Electron Correlation Regimes, Marlina Slamet, Viraht Sahni

Publications and Research

Kinetic related ground state properties of a two-electron 2D quantum dot in a magnetic field and a 3D quantum dot (Hooke's atom) are compared in the Wigner high (HEC) and low (LEC) electron correlation regimes. The HEC regime corresponds to low densities sufficient for the creation of a Wigner molecule. The LEC regime densities are similar to those of natural atoms and molecules. The results are determined employing exact closed-form analytical solutions of the Schrödinger-Pauli and Schrödinger equations, respectively. The properties studied are the local and nonlocal quantal sources of the density and the single particle density matrix; the kinetic …

Properties Of Type-Ii Znte/Znse Submonolayer Quantum Dots Studied Via Excitonic Aharonov-Bohm Effect And Polarized Optical Spectroscopy, Haojie Ji

Dissertations, Theses, and Capstone Projects

In this thesis I develop understanding of the fundamental physical and material properties of type-II ZnTe/ZnSe submonolayer quantum dots (QDs), grown via combination of molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). I use magneto-photoluminescence, including excitonic Aharonov-Bohm (AB) effect and polarized optical spectroscopy as the primary tools in this work.

I present previous studies as well as the background of optical and magneto-optical processes in semiconductor nanostructures and introduce the experimental methods in Chapters 1 - 3.

In Chapter 4 I focus on the excitonic AB effect in the type-II QDs. I develop a lateral tightly-bound exciton model …

Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar

Legacy Theses & Dissertations (2009 - 2024)

Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and spin of the electron can be manipulated through the application of gate potentials. In the thesis, there are two major contributions of the manipulation of electron spin. In regard to the first contribution, we present numerical simulations of such a spin in single electron devices for realistic asymmetric potentials in electrostatically confined quantum dot. Using analytical and numerical techniques we show that breaking in-plane rotational symmetry of the confining potential by applied gate voltage leads to a significant effect on the tuning …

Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie

Paul J. Simmonds

The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In_0.53Ga_0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58 × 10⁻⁶ ns⁻¹ for 1310 nm photons.

Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie

Paul J. Simmonds

The authors report the results of a detailed study of the effect of growth conditions, for molecular beam epitaxy, on the structural and optical properties of self-assembled InAs quantum dots (QDs) on In_0.524Al_0.476As. InAs QDs both buried in, and on top of, In_0.524Al_0.476As were analyzed using photoluminescence (PL) and atomic force microscopy. InAs QD morphology and peak PL emission wavelength both scale linearly with deposition thickness in monolayers (MLs). InAs deposition thickness can be used to tune QD PL wavelength by 170 nm/ML, over a range of almost 700 nm. Increasing growth …