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Full-Text Articles in Physics
An Efficiently Excited Eu3+ Luminescent Site Formed In Eu,O-Codoped Gan, Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara
An Efficiently Excited Eu3+ Luminescent Site Formed In Eu,O-Codoped Gan, Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara
Physics & Engineering Faculty Publications
For the development of III-nitride-semiconductor-based monolithic micro-light-emitting diode (LED) displays, Eu,O-codoped GaN (GaN:Eu,O) is a promising material candidate for the red LEDs. The luminescence efficiency of Eu-related emission strongly depends on the local atomic structure of Eu ions. Our previous research has revealed that post-growth thermal annealing is an effective method for reconfiguring luminescent sites, leading to a significant increase in light output. We observed the preferential formation of a site with a peak at similar to 2.004 eV by the annealing process. In this study, we demonstrate that it is a previously unidentified independent site (OMVPE-X) using combined excitation-emission …
Ambipolar Ferromagnetism By Electrostatic Doping Of A Manganite, L. M. Zheng, X. Renshaw Wang, W. M. Lü, C. J. Li, Tula R. Paudel, Z. Q. Liu, Z. Huang, S. W. Zeng, Kun Han, Z. H. Chen, X. P. Qiu, M. S. Li, Shize Yang, B. Yang, Matthew F. Chisholm, L. W. Martin, S. J. Pennycook, Evgeny Y. Tsymbal, J. M. D. Coey, W. W. Cao
Ambipolar Ferromagnetism By Electrostatic Doping Of A Manganite, L. M. Zheng, X. Renshaw Wang, W. M. Lü, C. J. Li, Tula R. Paudel, Z. Q. Liu, Z. Huang, S. W. Zeng, Kun Han, Z. H. Chen, X. P. Qiu, M. S. Li, Shize Yang, B. Yang, Matthew F. Chisholm, L. W. Martin, S. J. Pennycook, Evgeny Y. Tsymbal, J. M. D. Coey, W. W. Cao
Evgeny Tsymbal Publications
Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO3, with electron–hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this …
Resonant Tunneling Across A Ferroelectric Domain Wall, M. Li, L. L. Tao, J. P. Velev, Evgeny Y. Tsymbal
Resonant Tunneling Across A Ferroelectric Domain Wall, M. Li, L. L. Tao, J. P. Velev, Evgeny Y. Tsymbal
Evgeny Tsymbal Publications
Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with La0.5Sr0.5MnO3 electrodes separated by a BaTiO3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTiO3 can be induced by polar interfaces. The resulting V-shaped electrostatic potential profile across the BaTiO3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states …
Surface Impedance And Optimum Surface Resistance Of A Superconductor With An Imperfect Surface, Alex Gurevich, Takayuki Kubo
Surface Impedance And Optimum Surface Resistance Of A Superconductor With An Imperfect Surface, Alex Gurevich, Takayuki Kubo
Physics Faculty Publications
We calculate a low-frequency surface impedance of a dirty, s-wave superconductor with an imperfect surface incorporating either a thin layer with a reduced pairing constant or a thin, proximity-coupled normal layer. Such structures model realistic surfaces of superconducting materials which can contain oxide layers, absorbed impurities, or nonstoichiometric composition. We solved the Usadel equations self-consistently and obtained spatial distributions of the order parameter and the quasiparticle density of states which then were used to calculate a low-frequency surface resistance Rs (T) and the magnetic penetration depth λ(T) as functions of temperature in the limit of local London electrodynamics. It …
Giant Enhancement Of Magnetic Anisotropy In Ultrathin Manganite Films Via Nanoscale 1d Periodic Depth Modulation, Anil Rajapitamahuni, L. Zhang, Mark A. Koten, V. R. Singh, John D. Burton, Evgeny Y. Tsymbal, Jeffrey E. Shield, Xia Hong
Giant Enhancement Of Magnetic Anisotropy In Ultrathin Manganite Films Via Nanoscale 1d Periodic Depth Modulation, Anil Rajapitamahuni, L. Zhang, Mark A. Koten, V. R. Singh, John D. Burton, Evgeny Y. Tsymbal, Jeffrey E. Shield, Xia Hong
Evgeny Tsymbal Publications
The relatively low magnetocrystalline anisotropy (MCA) in strongly correlated manganites (La,Sr)MnO3 has been a major hurdle for implementing them in spintronic applications. Here we report an unusual, giant enhancement of in-plane MCA in 6 nm La0.67Sr0.33MnO3 (LSMO) films grown on (001) SrTiO3 substrates when the top 2 nm is patterned into periodic stripes of 100 or 200 nm width. Planar Hall effect measurements reveal an emergent uniaxial anisotropy superimposed on one of the original biaxial easy axes for unpatterned LSMO along (110) directions, with a 50-fold enhanced anisotropy energy density of 5.6 × …
Chemically Induced Jahn–Teller Ordering On Manganite Surfaces, Zheng Gai, Wenzhi Lin, John D. Burton, K. Fuchigami, Paul C. Snijders, T. Z. Ward, Evgeny Y. Tsymbal, J. Shen, Stephen Jesse, Sergei V. Kalinin, Arthur P. Baddorf
Chemically Induced Jahn–Teller Ordering On Manganite Surfaces, Zheng Gai, Wenzhi Lin, John D. Burton, K. Fuchigami, Paul C. Snijders, T. Z. Ward, Evgeny Y. Tsymbal, J. Shen, Stephen Jesse, Sergei V. Kalinin, Arthur P. Baddorf
Evgeny Tsymbal Publications
Physical and electrochemical phenomena at the surfaces of transition metal oxides and their coupling to local functionality remains one of the enigmas of condensed matter physics. Understanding the emergent physical phenomena at surfaces requires the capability to probe the local composition, map order parameter fields and establish their coupling to electronic properties. Here we demonstrate that measuring the sub-30-pm displacements of atoms from high-symmetry positions in the atomically resolved scanning tunnelling microscopy allows the physical order parameter fields to be visualized in real space on the single-atom level. Here, this local crystallographic analysis is applied to the in-situ-grown manganite surfaces. …
Polarization-Controlled Ohmic To Schottky Transition At A Metal/Ferroelectric Interface, Xiaohui Liu, Yong Wang, John D. Burton, Evgeny Y. Tsymbal
Polarization-Controlled Ohmic To Schottky Transition At A Metal/Ferroelectric Interface, Xiaohui Liu, Yong Wang, John D. Burton, Evgeny Y. Tsymbal
Evgeny Tsymbal Publications
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n-BTO). The coexistence of a ferroelectric phase and conductivity opens the door to new functionalities that may provide a unique route for novel device applications. Using first-principles methods and electrostatic modeling, we explore the effect that the switchable polarization of n-BTO has on the electronic properties of the SrRuO3/n-BTO (001) interface. Ferroelectric polarization controls the accumulation or depletion of electron charge at the interface, and the associated bending of the n-BTO conduction band determines the transport regime across the interface. The …
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Jeffrey Dyck
Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure N2 for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN.