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Full-Text Articles in Physics
Extraordinary Magnetoresistance In Encapsulated Graphene Devices, Bowen Zhou
Extraordinary Magnetoresistance In Encapsulated Graphene Devices, Bowen Zhou
Arts & Sciences Electronic Theses and Dissertations
We report a study on the phenomenon of extraordinary magnetoresistance (EMR) in boron nitride encapsulated monolayer graphene devices. Extremely large EMR values–calculated as the change in magnetoresistance, (R(B)–R0)/R0–can be found in these devices due to the vanishingly small resistance values at zero field. In many devices the zero-field resistance can become negative, which enables R0 to be chosen arbitrarily close to zero depending only on measurement precision, resulting in very large EMR. We critically discuss the dependence of EMR on measurement precision and device asymmetry. On the other hand, we also find the largest reported values of the sensitivity to …
Laser-Assisted Nanowelding Of Graphene To Metals: An Optical Approach Toward Ultralow Contact Resistance, K. Keramatnejad, Yunshen Zhou, Da Wei Li, Hossein Rabiee Golgir, Xi Huang, Qi Ming Zhou, Jingfeng Song, Stephen Ducharme, Yongfeng Lu
Laser-Assisted Nanowelding Of Graphene To Metals: An Optical Approach Toward Ultralow Contact Resistance, K. Keramatnejad, Yunshen Zhou, Da Wei Li, Hossein Rabiee Golgir, Xi Huang, Qi Ming Zhou, Jingfeng Song, Stephen Ducharme, Yongfeng Lu
Stephen Ducharme Publications
The electrical performance of graphene-based devices is largely limited by substantial contact resistance at the heterodimensional graphene-metal junctions. A laserassisted nanowelding technique was developed to reduce graphene-metal (G-M) contact resistance and improve carrier injection in suspended graphene devices. Selective breakdown of C-C bonds and formation of structural defects were realized through laser irradiation at the edges of graphene within the G-M contact regions in order to increase the chemical reactivity of graphene, facilitate G-M bonding and, therefore, maximize interfacial carrier transportation. Through this method, significantly reduced G-M contact resistances, as low as 2.57 Ω-μm were obtained. In addition, it was …