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Full-Text Articles in Physics

Control Of Majorana Edge Modes By A G-Factor Engineered Nanowire Spin Transistor, Amrit De, Alexey Kovalev Nov 2014

Control Of Majorana Edge Modes By A G-Factor Engineered Nanowire Spin Transistor, Amrit De, Alexey Kovalev

Department of Physics and Astronomy: Faculty Publications

We propose the manipulation of Majorana edge states via hybridization and spin currents in a nanowire spin transistor. The spin transistor is based on a heterostructure nanowire comprising of semiconductors with large and small g-factors that form the topological and non-topological regions respectively. The hybridization of bound edge states results in spin currents and 4π-periodic torques, as a function of the relative magnetic field angle – an effect which is dual to the fractional Josephson effect. We establish relation between torques and spin-currents in the non-topological region where the magnetic field is almost zero and spin is …


Investigation Of Carrier Transit Motion In Pcdtbt By Optical Shg Technique, Shahino Mah Abdullah Aug 2014

Investigation Of Carrier Transit Motion In Pcdtbt By Optical Shg Technique, Shahino Mah Abdullah

Shahino Mah Abdullah

We analyze the carrier transit behavior in poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT), which has been reported as a donor material for efficient bulk hetero junction photovolatic devices. The transfer and transient carrier mobilities in the PCDTBT thin films have been measured and analyzed. The transfer mobility has been measured by the transfer curve of the OFET, whereas, the transient mobility is recorded using a time-resolved electric-field-induced optical second-harmonic-generation (TRM-SHG) technique. Using TRM-SHG technique, the dynamic motion of the charge carriers in the PCDTBT thin films has been directly visualized. We anticipate that the analysis of the carrier motion by TRM-SHG, will be effective …


Below Gap Optical Absorption In Gaas Driven By Intense, Single-Cycle Coherent Transition Radiation, J. Goodfellow, Matthias Fuchs, D. Daranciang, S. Ghimire, F. Chen, H. Loos, D. A. Reis, A. S. Fisher, A. M. Lindenberg Jul 2014

Below Gap Optical Absorption In Gaas Driven By Intense, Single-Cycle Coherent Transition Radiation, J. Goodfellow, Matthias Fuchs, D. Daranciang, S. Ghimire, F. Chen, H. Loos, D. A. Reis, A. S. Fisher, A. M. Lindenberg

Matthias Fuchs Publications

Single-cycle terahertz fields generated by coherent transition radiation from a relativistic electron beam are used to study the high field optical response of single crystal GaAs. Large amplitude changes in the sub-band-gap optical absorption are induced and probed dynamically by measuring the absorption of a broad-band optical beam generated by transition radiation from the same electron bunch, providing an absolutely synchronized pump and probe geometry. This modification of the optical properties is consistent with strong-field-induced electroabsorption. These processes are pertinent to a wide range of nonlinear terahertz-driven lightmatter interactions anticipated at accelerator-based sources.


Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman May 2014

Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman

Shahino Mah Abdullah

Pi-conjugated organic semiconductors have long been used as either holes or electrons transport materials. Recently ambipolar charge carrier transport in these materials have been reported in many investigations. In this paper, we report on the basis of experimental results that the organic semiconductor (donor/acceptor) materials can be as good electrons transporters as these materials are holes transporters. In our study, the solution-processed unipolar diodes based on organic materials P3HT, VOPCPhO and their blends with PCBM have been fabricated. The I-V characteristics of these diodes have been analyzed in the space charge limited current regime. The values of the electron and …


Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman Apr 2014

Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman

Zubair Ahmad

Pi-conjugated organic semiconductors have long been used as either holes or electrons transport materials. Recently ambipolar charge carrier transport in these materials have been reported in many investigations. In this paper, we report on the basis of experimental results that the organic semiconductor (donor/acceptor) materials can be as good electrons transporters as these materials are holes transporters. In our study, the solution-processed unipolar diodes based on organic materials P3HT, VOPCPhO and their blends with PCBM have been fabricated. The I-V characteristics of these diodes have been analyzed in the space charge limited current regime. The values of the electron and …