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- Carrier mobility (1)
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Articles 1 - 4 of 4
Full-Text Articles in Physics
Direct Picosecond Measurement Of Photoinduced Cooper Pair Breaking In Lead, John F. Federici, Benjamin I. Greene, Peter N. Saeta, Douglas R. Dykaar, F. Sharifi, R. C. Dynes
Direct Picosecond Measurement Of Photoinduced Cooper Pair Breaking In Lead, John F. Federici, Benjamin I. Greene, Peter N. Saeta, Douglas R. Dykaar, F. Sharifi, R. C. Dynes
All HMC Faculty Publications and Research
We report on a direct kinetic measurement of Cooper-pair breaking in superconducting lead. A 100-fs pulse of visible light was used to excite a thin-film lead sample, while the Cooper-pair density was optically probed using an ultrashort pulse of broadband far-infrared radiation. Subsequent to the absorption of the visible light, a rapid (ps) change in the far-infrared optical transmission was observed, corresponding to the breaking of Cooper pairs and the collapse of the superconducting gap.
Intervalley Scattering In Gaas And Inp Probed By Pulsed Far‐Infrared Transmission Spectroscopy, Peter N. Saeta, John F. Federici, Benjamin I. Greene, Douglas R. Dykaar
Intervalley Scattering In Gaas And Inp Probed By Pulsed Far‐Infrared Transmission Spectroscopy, Peter N. Saeta, John F. Federici, Benjamin I. Greene, Douglas R. Dykaar
All HMC Faculty Publications and Research
The dynamics of photoexcited electrons in GaAs and InP were studied using the transmission of 200‐fs pulses of far‐infrared radiation in the spectral range 15–100 cm−1. Kinetic traces of the infrared transmission as a function of delay between optical excitation and infrared probe show a probe‐limited decrease in transmission followed by a more gradual (0.7–2 ps) drop to a steady value, consistent with the slow return of electrons from high‐mass satellite valleys. Infrared transmission spectra, analyzed in the context of a Drude model, reveal density‐dependent electron mobilities 3–4 times below equilibrium n‐doped values. Electron‐hole collisions likely account …
Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi
Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi
All HMC Faculty Publications and Research
We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations.
Ultrahigh Vacuum Chamber For Synchrotron X-Ray Diffraction From Films Adsorbed On Single-Crystal Surfaces, Jr Dennison, S. K. Wang, S. N. Ehrlich
Ultrahigh Vacuum Chamber For Synchrotron X-Ray Diffraction From Films Adsorbed On Single-Crystal Surfaces, Jr Dennison, S. K. Wang, S. N. Ehrlich
Journal Articles
An ultrahigh vacuum chamber has been developed for structural analysis of adsorbed films and single-crystal surfaces using synchrotron x-ray diffraction. It is particularly well suited for investigations of physisorbed and other weakly bound films. The chamber is small enough to transport and mount directly on a standard four-axis diffractometer and can also be used independently of the x-ray diffractometer. A low-current, pulse-counting, low-energy electron diffraction/Auger spectroscopy system with a position-sensitive detector enables in situ characterization of the film and substrate while the sample is located at the x-ray scattering position. A closed-cycle He refrigerator and electron bombardment heater provide controlled …