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Articles 1 - 13 of 13
Full-Text Articles in Physics
Posterminaries: More Or Less Modern, Alexander H. King
Posterminaries: More Or Less Modern, Alexander H. King
Alexander H. King
It is yet another sign that I am aging. More and more often when young researchers hand me a written report of their research, I find myself criticizing their introductory section: “You need to start your literature survey with the original papers on this topic. Go and read…” followed by a citation to some classic of the learned literature.
Growth-Temperature Optimization For Low Carrier-Density In0.75Ga0.25As-Based High Electron Mobility Transistors On Inp, Paul J. Simmonds, H. E. Beere, D. A. Ritchie, S. N. Holmes
Growth-Temperature Optimization For Low Carrier-Density In0.75Ga0.25As-Based High Electron Mobility Transistors On Inp, Paul J. Simmonds, H. E. Beere, D. A. Ritchie, S. N. Holmes
Paul J. Simmonds
Two-dimensional electron gases (2DEGs) were formed in undoped In0.75Al0.25As / In0.75Ga0.25As / In0.75Al0.25As quantum wells. The optimal growth temperature for this structure is 410°C, with peak 2DEG electron mobility and density values of μ = 221000 cm2/V s and n = 1.36 × 1011 cm−2 at 1.5 K. This electron mobility is equal to the highest previously published for these undoped structures but with a factor of 2 reduction in n. This has been achieved through the use of a significantly thinner InAlAs …
Quantum Dot Resonant Tunneling Diodes For Telecom Wavelength Single Photon Detection, H. W. Li, Paul J. Simmonds, H. E. Beere, B. E. Kardynał, D. A. Ritchie, A. J. Shields
Quantum Dot Resonant Tunneling Diodes For Telecom Wavelength Single Photon Detection, H. W. Li, Paul J. Simmonds, H. E. Beere, B. E. Kardynał, D. A. Ritchie, A. J. Shields
Paul J. Simmonds
Single photon detection was realized at a telecom wavelength with quantum dot resonant tunneling diodes grown on an InP substrate. The structure contains a AlAs/In0.53Ga0.47As/AlAs quantum well with InAs quantum dots grown on the top AlAs barrier. The single photon detection efficiency of the device under 1310 nm illumination was measured to be about 0.35% ± 0.07% with a dark count rate of 1.58×10-6 ns-1. This corresponds to an internal efficiency of 6.3%.
Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie
Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie
Paul J. Simmonds
The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In0.53Ga0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58 × 10−6 ns−1 for 1310 nm photons.
Control Of Porosity In Fluoride Thin Films Prepared By Vapor Deposition, Alexander H. King
Control Of Porosity In Fluoride Thin Films Prepared By Vapor Deposition, Alexander H. King
Alexander H. King
We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF2), and calcium fluoride (CaF2) as a function of the substrate temperature for films deposited by thermal evaporation onto glass substrates. The amount of porosity in the thin films was measured using an atomic force microscope and a quartz crystal thickness monitor. The porosity was very sensitive to the substrate temperature and decreased as the substrate temperature increased. Consistent behavior was observed among all of the materials in this study.
Posterminaries: Full Circle, Alexander H. King
Posterminaries: Full Circle, Alexander H. King
Alexander H. King
A few years ago, I was walking near the old Union Station in Pittsburgh with a colleague only slightly younger than myself, when we happened upon some large-scale relics of the steel industry displayed for public viewing. “You don’t see too many of those in public parking lots,” I offered. “Um… what is it?” was the response. I suppose I was just a little surprised that a prominent materials scientist did not recognize a Bessemer converter—arguably the principal source of wealth during the U.S. industrial revolution—but this conversation took place back when steel was in decline, and many university Materials …
Density Functional Study Of Structural Trends For Late-Transition-Metal 13-Atom Clusters, Lin-Lin Wang, Duane D. Johnson
Density Functional Study Of Structural Trends For Late-Transition-Metal 13-Atom Clusters, Lin-Lin Wang, Duane D. Johnson
Duane D. Johnson
Because reactivity increases as particle size decreases and competition between numerous structures are possible, which affects catalytic and magnetic properties, we study the structural trends of late-transition-metal 13-atom clusters using density functional theory within the generalized gradient approximation to exchange-correlation functional. We consider open structural motifs, such as bilayer and cubic (recently found to have lower energy), and find new bilayer candidates that are even lower in energy. To study the influence of d-orbital filling on structural trends, we focus on Pt, Pd, and Rh clusters and find several new, low-energy structures for Pt13 and Pd13 from searches using a …
Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie
Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie
Paul J. Simmonds
The authors report the results of a detailed study of the effect of growth conditions, for molecular beam epitaxy, on the structural and optical properties of self-assembled InAs quantum dots (QDs) on In0.524Al0.476As. InAs QDs both buried in, and on top of, In0.524Al0.476As were analyzed using photoluminescence (PL) and atomic force microscopy. InAs QD morphology and peak PL emission wavelength both scale linearly with deposition thickness in monolayers (MLs). InAs deposition thickness can be used to tune QD PL wavelength by 170 nm/ML, over a range of almost 700 nm. Increasing growth …
Arrays Of Interacting Nanostructures: Ferromagnetic And Superconducting Cases, Andrei Ursache
Arrays Of Interacting Nanostructures: Ferromagnetic And Superconducting Cases, Andrei Ursache
Andrei E. Ursache
No abstract provided.
Thermal Effects On Mechanical Grinding-Induced Surface Texture In Tetragonal Piezoelectrics, Wonyoung Chang, Alexander H. King, Keith J. Bowman
Thermal Effects On Mechanical Grinding-Induced Surface Texture In Tetragonal Piezoelectrics, Wonyoung Chang, Alexander H. King, Keith J. Bowman
Alexander H. King
The effect of temperature on grinding-induced texture in tetragonal lead zirconate titanate (PZT) and lead titanate (PT) has been investigated using in situ x-ray diffraction (XRD) with an area detector. In contrast with previous results on electrical poling, mechanically-ground PT and soft PZT materials retain strong ferroelastic textures during thermal cycling, even after excursions to temperatures slightly above the Curie temperature. The relationship between the residual stresses in the surface region, caused by grinding, and those resulting from domain wall motion is elucidated by in situ texture measurements obtained during thermal cycling.
How Surface Stresses Lead To Size-Dependent Mechanics Of Tensile Deformation In Nanowires, M. Ravi Shankar, Alexander H. King
How Surface Stresses Lead To Size-Dependent Mechanics Of Tensile Deformation In Nanowires, M. Ravi Shankar, Alexander H. King
Alexander H. King
It has been proposed that surface and interface stresses can modify the elastic behavior in nanomaterials such as nanowires. The authors show that surface stresses modify the tensile response of nanowires only when nonlinear elastic effects become important leading to cross terms between the applied stress and the surface stress. These effects are only significant when the radius of the nanowire is of the order of a few nanometers. The resulting alteration of tensile stiffness, though effected in part by the nonlinear elastic modulus, is particularly wrought by a modification of the stress state in the deformed nanowire.
Energy Pathways And Directionality In Deformation Twinning, S. Kibey, J. B. Liu, Duane D. Johnson, H. Sehitoglu
Energy Pathways And Directionality In Deformation Twinning, S. Kibey, J. B. Liu, Duane D. Johnson, H. Sehitoglu
Duane D. Johnson
We present ab initiodensity functional theory calculations of twinning energy pathways for two opposite twinning modes, (111)[112¯] and (111)[1¯1¯2], in fcc materials to examine the directional nature of twinning which cannot be explained by classical twin nucleationmodels or the “twinnability” criterion. By accounting for these energy pathways in a multiscale model, we quantitatively predict the critical twinning stress for the (111)[1¯1¯2] mode to be substantially higher compared to the favorable (111)[112¯] mode (whose predicted stresses are in agreement with experiment), thus, ruling out twinning in the (111)[1¯1¯2] mode.
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2-Xvxte3 With X <~ 0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P C. Quayle, C DrašAr, P LošŤÁK
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2-Xvxte3 With X <~ 0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P C. Quayle, C DrašAr, P LošŤÁK
Jeffrey Dyck
The authors report on the hydrostatic pressure dependence of the magnetotransport properties of ferromagnetic Sb2-xVxTe3 single crystals with x=0.02—0.03. Pressure significantly increases the free hole concentration in these compounds. In turn, the Curie temperature is suppressed by roughly 40%, which goes against many models that would predict an increase in Curie temperature with increasing carrier concentration. These results indicate that the ferromagnetism in these materials is carrier mediated and that a full Ruderman-Kittel-Kasuya-Yosida model that takes into account the oscillatory nature of the indirect exchange interaction among localized spins is needed in order to explain the data.