Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physics
Ferroelectric-Domain-Patterning-Controlled Schottky Junction State In Monolayer Mos2, Zhiyong Xiao, Jingfeng Song, David K. Ferry, Stephen Ducharme, Xia Hong
Ferroelectric-Domain-Patterning-Controlled Schottky Junction State In Monolayer Mos2, Zhiyong Xiao, Jingfeng Song, David K. Ferry, Stephen Ducharme, Xia Hong
Stephen Ducharme Publications
We exploit scanning-probe-controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS2 between a transistor and a junction state. In the presence of a domain wall, MoS2 exhibits rectified I-V characteristics that are well described by the thermionic emission model. The induced Schottky barrier height ΦeffB varies from 0.38 to 0.57 eV and is tunable by a SiO2 global back gate, while the tuning range of ΦeffB depends sensitively on the conduction-band-tail trapping states. Our work points to a new route to achieving programmable …
Laser-Assisted Nanowelding Of Graphene To Metals: An Optical Approach Toward Ultralow Contact Resistance, K. Keramatnejad, Yunshen Zhou, Da Wei Li, Hossein Rabiee Golgir, Xi Huang, Qi Ming Zhou, Jingfeng Song, Stephen Ducharme, Yongfeng Lu
Laser-Assisted Nanowelding Of Graphene To Metals: An Optical Approach Toward Ultralow Contact Resistance, K. Keramatnejad, Yunshen Zhou, Da Wei Li, Hossein Rabiee Golgir, Xi Huang, Qi Ming Zhou, Jingfeng Song, Stephen Ducharme, Yongfeng Lu
Stephen Ducharme Publications
The electrical performance of graphene-based devices is largely limited by substantial contact resistance at the heterodimensional graphene-metal junctions. A laserassisted nanowelding technique was developed to reduce graphene-metal (G-M) contact resistance and improve carrier injection in suspended graphene devices. Selective breakdown of C-C bonds and formation of structural defects were realized through laser irradiation at the edges of graphene within the G-M contact regions in order to increase the chemical reactivity of graphene, facilitate G-M bonding and, therefore, maximize interfacial carrier transportation. Through this method, significantly reduced G-M contact resistances, as low as 2.57 Ω-μm were obtained. In addition, it was …