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Full-Text Articles in Physics
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Graduate Theses and Dissertations
III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …
Theoretical Investigations Of The Electronic, Magnetic, And Thermoelectric Properties Of Transition-Metal Based Compounds, Haleoot Edaan Raad
Theoretical Investigations Of The Electronic, Magnetic, And Thermoelectric Properties Of Transition-Metal Based Compounds, Haleoot Edaan Raad
Graduate Theses and Dissertations
The electronic, magnetic, and thermoelectric properties of transition-metal based compounds were investigated by using the density functional theory and Boltzmann transport formalism. It was found that the Co-based Heusler compounds and InSe monochalcogenide are among the materials that may be used for future thermoelectric devices. Furthermore, the investigation showed that the quaternary Heusler compounds, such as, CoFeYGe, where Y is Ti or Cr, are half-metallic ferromagnetic materials with full electron spin polarization. The lattice thermal conductivity (κL) was found to decrease for these alloys as the temperature increases. The present investigation indicated that the phonon optical modes have a major …