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Full-Text Articles in Physics
Photoluminescence Properties Of Silicon Quantum-Well Layers, Peter N. Saeta, A. C. Gallagher
Photoluminescence Properties Of Silicon Quantum-Well Layers, Peter N. Saeta, A. C. Gallagher
All HMC Faculty Publications and Research
Nanometer-scale crystal silicon films surrounded by SiO2 were prepared by oxidizing silicon-on-insulator substrates prepared from SIMOX (separation by implantation of oxygen) and crystallized hydrogenated amorphous silicon films. Average silicon layer thickness was determined from reflection spectra. When sufficiently thin (<2 >nm), all layers emitted red photoluminescence under blue and UV cw excitation, with a spectrum that did not depend on the mean layer thickness. The spectrum was roughly Gaussian with a peak energy of 1.65 eV, which is lower than for most porous silicon spectra. The time scale for the luminescence decay was ~35 μs at room temperature and …
Visible Luminescence From Single Crystal‐Silicon Quantum Wells, Peter N. Saeta, A. C. Gallagher
Visible Luminescence From Single Crystal‐Silicon Quantum Wells, Peter N. Saeta, A. C. Gallagher
All HMC Faculty Publications and Research
Single crystal‐silicon quantum wells with SiO2 barriers have been grown from SIMOX silicon‐on‐insulator substrates. Photoluminescence in the red and near‐infrared is observed for average well width <8 >nm, with peak signal for 2‐nm average width. The luminescence spectrum is independent of well width for SiO2 barriers, but shifts 0.3 eV to higher energy upon removal of the upper oxide layer with HF. Both results suggest the importance of radiation from surface states.