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Full-Text Articles in Physics
Microscopic Theory Of The Low Frequency Raman Modes In Germanium Nanocrystals, Shang-Fen Ren, Peter Y. Yu
Microscopic Theory Of The Low Frequency Raman Modes In Germanium Nanocrystals, Shang-Fen Ren, Peter Y. Yu
Faculty publications – Physics
We have studied the Raman intensities of low-frequency phonon modes in germanium (Ge) nanocrystals (NC) with varying sizes by using a microscopic valence force field model. The results are compared with the predictions of the continuum model of Lamb using a projection method. We found that the l=0 spheroidal Lamb modes are Raman active in the parallel polarization scattering geometry, while the l=2 spheroidal Lamb modes are active in the crossed polarization geometry. This result agrees with the group theory prediction that the torsional Lamb modes are not Raman active, but is in disagreement with the identification of torsional Lamb …
Calculations Of Surface Effects On Phonon Modes And Raman Intensities Of Ge Quantum Dots, Shang-Fen Ren, Wei Cheng
Calculations Of Surface Effects On Phonon Modes And Raman Intensities Of Ge Quantum Dots, Shang-Fen Ren, Wei Cheng
Faculty publications – Physics
Phonon modes and Raman intensities of Ge quantum dots (QDs) with two different types of surfaces, a free standing surface or a fixed surface, in a size range from five atoms to 7 nm in diameter, are calculated by using a microscopic valence force field model. The results are compared, and the effects of surfaces on phonon properties of QDs are investigated. It is found that phonon modes and Raman intensities of QDs with these two different types of surfaces have obvious differences which clearly reveal the effects of the surfaces of QDs. The calculated results agree with existing experimental …
Calculations On The Size Effects Of Raman Intensities Of Silicon Quantum Dots, Wei Cheng, Shang-Fen Ren
Calculations On The Size Effects Of Raman Intensities Of Silicon Quantum Dots, Wei Cheng, Shang-Fen Ren
Faculty publications – Physics
Raman intensities of Si quantum dots (QD's) with up to 11489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these QD's, including all vibration frequencies and vibration amplitudes, are calculated directly from the lattice-dynamic matrix by using a microscopic valence force field model combined with the group theory. Then the Raman intensities of these quantum dots are calculated by using a bond-polarizability approximation. The size effects of the Raman intensity in these QD's are discussed in detail based on these calculations. The calculations are compared with the available experimental observations. We are …
Electrons In Image States Near Roughened Metal Surfaces, Brian K. Clark, Brian W. Gregory, Jean M. Standard
Electrons In Image States Near Roughened Metal Surfaces, Brian K. Clark, Brian W. Gregory, Jean M. Standard
Faculty Publications – Chemistry
Electrons near roughened Ag and Au surfaces with chemisorbed dielectric overlayers of alkanethiol or alkaneselenol self-assembled monolayers are shown to move within the sulfur or selenium head-group layer on the metal terraces. The electrons exist in image states with respect to Ag or Au step edges. There is no substantial image force between the electrons and the terraces.