Physics Commons^™

Enhanced Luminescence Efficiency In Eu-Doped Gan Superlattice Structures Revealed By Terahertz Emission Spectroscopy, Fumikazu Murakami, Atsushi Takeo, Brandon Mitchell, Volkmar Dierolf, Yasufumi Fujiwara, Masayoshi Tonouchi

Physics & Engineering Faculty Publications

Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-emitting diodes, which are needed for future micro-display technologies. Introducing a superlattice structure comprised of alternating undoped and Eu-doped GaN layers has been observed to lead to an order-of-magnitude increase in output power; however, the underlying mechanism remains unknown. Here, we explore the optical and electrical properties of these superlattice structures utilizing terahertz emission spectroscopy. We find that ~0.1% Eu doping reduces the bandgap of GaN by ~40 meV and increases the index of refraction by ~20%, which would result in potential barriers and carrier confinement within a superlattice …