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Photocurrent-Voltage Relation Of Resonant Tunneling Diode Photodetectors, Andreas Pfenning, Favbian Hartmann, Mariama Rebello Sousa Dias, Fabian Langer, Martin Kamp, Leonardo Kleber Castelano, Victor Lopez-Richard, Gilmar Eugenio Marques, Sven Höfling, Lukas Worschech
Photocurrent-Voltage Relation Of Resonant Tunneling Diode Photodetectors, Andreas Pfenning, Favbian Hartmann, Mariama Rebello Sousa Dias, Fabian Langer, Martin Kamp, Leonardo Kleber Castelano, Victor Lopez-Richard, Gilmar Eugenio Marques, Sven Höfling, Lukas Worschech
Physics Faculty Publications
We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ = 1.3 µm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency ƞ(V), the lifetime of photogenerated …